EP 1145324 A2 20011017 - MOS-TRANSISTOR STRUCTURE WITH A TRENCH-GATE ELECTRODE AND A REDUCED SPECIFIC CLOSING RESISTOR AND METHODS FOR PRODUCING AN MOS TRANSISTOR STRUCTURE
Title (en)
MOS-TRANSISTOR STRUCTURE WITH A TRENCH-GATE ELECTRODE AND A REDUCED SPECIFIC CLOSING RESISTOR AND METHODS FOR PRODUCING AN MOS TRANSISTOR STRUCTURE
Title (de)
MOS-TRANSISTORSTRUKTUR MIT EINER TRENCH-GATE-ELEKTRODE UND EINEM VERRINGERTEN SPEZIFISCHEN EINSCHALTWIDERSTAND UND VERFAHREN ZUR HERSTELLUNG EINER MOS-TRANSISTORSTRUKTUR
Title (fr)
STRUCTURE DE TRANSISTOR MOS COMPRENANT UNE ELECTRODE DE GRILLE DE TRANCHEE ET PRESENTANT UNE RESISTANCE D'ENCLENCHEMENT SPECIFIQUE REDUITE, ET PROCEDE DE PRODUCTION D'UNE STRUCTURE DE TRANSISTOR MOS
Publication
Application
Priority
- DE 0000621 W 20000301
- DE 19913375 A 19990324
Abstract (en)
[origin: DE19913375A1] The invention relates to an MOS transistor structure with a trench gate electrode and a reduced specific closing resistor. The integral of the doping concentration of the body region in the lateral direction between two adjacent drift regions is greater than or equal to the integral of the doping concentration in a drift region in the same lateral direction. The invention also relates to methods for producing an MOS transistor structure. Body regions and drift regions are produced by means of epitaxic growth and implantation, repeated epitaxic growth or by filling trenches with doped conduction material.
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01)
CPC (source: EP US)
H01L 29/0634 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP US); H01L 29/0878 (2013.01 - EP US); H01L 29/1095 (2013.01 - EP US)
Designated contracting state (EPC)
AT DE FR GB IE IT
DOCDB simple family (publication)
DE 19913375 A1 20001005; DE 19913375 B4 20090326; EP 1145324 A2 20011017; EP 1145324 A3 20011024; JP 2002540603 A 20021126; US 6465843 B1 20021015; WO 0057481 A2 20000928; WO 0057481 A3 20010726
DOCDB simple family (application)
DE 19913375 A 19990324; DE 0000621 W 20000301; EP 00920348 A 20000301; JP 2000607274 A 20000301; US 70129101 A 20010427