EP 1146958 A4 20060621 - APPARATUS AND METHOD FOR POINT-OF-USE TREATMENT OF EFFLUENT GAS STREAMS
Title (en)
APPARATUS AND METHOD FOR POINT-OF-USE TREATMENT OF EFFLUENT GAS STREAMS
Title (de)
VORRICHTUNG UND VERFAHREN ZUR VOR-ORT-BEHANDLUNG VON ABGASSTRÖMEN
Title (fr)
APPAREIL ET PROCEDE PERMETTANT DE REDUIRE DES COURANTS DE GAZ D'EFFLUENTS AU NIVEAU DU POINT D'UTILISATION
Publication
Application
Priority
- US 9929910 W 19991215
- US 21210798 A 19981215
Abstract (en)
[origin: WO0035573A1] A system for abating undesired component(s) from a gas stream containing the same, such as halocompounds, acid gases, silanes, ammonia, etc., by scrubbing of the effluent gas stream with an aqueous scrubbing medium. Halocompounds, such as fluorine, fluorides, perfluorocarbons, and chlorofluorocarbons, may be scrubbed in the presence of a reducing agent, e.g., sodium thiosulfate, ammonium hydroxide, or potassium iodide. In one embodiment, the scrubbing system includes a first acid gas scrubbing unit operated in cocurrent gas/liquid flow (110), and a second "polishing" unit operated in countercurrent gas/liquid flow (120), to achieve high removal efficiency with low consumption of water. The scrubbing system may utilize removable insert beds of packing material, packaged in a foraminous containment structure. The abatement system of the invention has particular utility in the treatment of semiconductor manufacturing process effluents.
IPC 1-7
B01J 8/02; B01J 8/04; B01J 19/30; B01D 19/02; B01D 19/04; B01D 53/14; B01D 53/34; B01D 53/40; B01D 53/68; B01D 53/70; B01D 53/78
IPC 8 full level
B01D 19/04 (2006.01); B01D 21/01 (2006.01); B01D 53/14 (2006.01); B01D 53/34 (2006.01); B01D 53/46 (2006.01); B01D 53/68 (2006.01); B01D 53/70 (2006.01); B01D 53/77 (2006.01); B01D 53/78 (2006.01); B01J 19/00 (2006.01); B01J 19/08 (2006.01); C02F 1/48 (2006.01); C02F 1/52 (2006.01); C23C 16/44 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 21/31 (2006.01)
CPC (source: EP KR)
B01D 19/04 (2013.01 - EP); B01D 53/14 (2013.01 - EP KR); B01D 53/68 (2013.01 - EP); B01D 53/70 (2013.01 - EP); B01D 53/78 (2013.01 - EP); F23G 7/06 (2013.01 - EP); F23M 5/08 (2013.01 - EP); F23G 2209/142 (2013.01 - EP); Y02C 20/30 (2013.01 - EP)
Citation (search report)
- [DPX] WO 9961132 A1 19991202 - ADVANCED TECH MATERIALS [US]
- [XY] US 5405590 A 19950411 - MACEDO PEDRO B D [US], et al
- [DXY] WO 9829178 A1 19980709 - ATMI ECOSYS CORP [US]
- [X] GB 1447450 A 19760825 - BAYER AG
- [X] DE 2740039 A1 19790315 - HOELTER HEINZ
- [A] PATENT ABSTRACTS OF JAPAN vol. 009, no. 301 (C - 316) 28 November 1985 (1985-11-28)
- See references of WO 0035573A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0035573 A1 20000622; AU 2188900 A 20000703; CN 1167497 C 20040922; CN 1367713 A 20020904; CN 1565710 A 20050119; EP 1146958 A1 20011024; EP 1146958 A4 20060621; JP 2002539912 A 20021126; KR 100481256 B1 20050411; KR 20010093838 A 20011029; TW 492891 B 20020701
DOCDB simple family (application)
US 9929910 W 19991215; AU 2188900 A 19991215; CN 200410071672 A 19991215; CN 99816115 A 19991215; EP 99966320 A 19991215; JP 2000587880 A 19991215; KR 20017007495 A 20010615; TW 88122031 A 19991215