EP 1147548 A1 20011024 - PRODUCTION OF MULTILAYER SEMICONDUCTOR STRUCTURES BY CHANGING THE CARRIER GAS
Title (en)
PRODUCTION OF MULTILAYER SEMICONDUCTOR STRUCTURES BY CHANGING THE CARRIER GAS
Title (de)
HERSTELLUNG VON MEHRSCHICHTIGEN HALBLEITERSTRUKTUREN MITTELS TRÄGERGAS-UMSCHALTUNG
Title (fr)
PRODUCTION DE STRUCTURES A SEMI-CONDUCTEUR MULTICOUCHES PAR CHANGEMENT DU GAZ PORTEUR
Publication
Application
Priority
- DE 19856245 A 19981207
- EP 9909122 W 19991125
Abstract (en)
[origin: DE19856245A1] The invention relates to a method for producing multilayer semiconductor structures comprised of compound semiconductors by the epitaxy of solid-forming process gases, said process gases being diluted in a carrier gas, on a substrate that is heated for producing the layers. The mixture comprised of the carrier gas and of the process gases is brought into contact with said substrate. In order to produce different layers, the use of different carrier gases, especially hydrogen and nitrogen, is alternated or different mixtures of the carrier gases are used.
IPC 1-7
IPC 8 full level
H01L 21/205 (2006.01)
CPC (source: EP)
H01L 21/0237 (2013.01); H01L 21/02461 (2013.01); H01L 21/02543 (2013.01); H01L 21/0262 (2013.01)
Citation (search report)
See references of WO 0034990A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
DE 19856245 A1 20000615; EP 1147548 A1 20011024; WO 0034990 A1 20000615
DOCDB simple family (application)
DE 19856245 A 19981207; EP 9909122 W 19991125; EP 99958123 A 19991125