EP 1147552 A1 20011024 - FIELD EFFECT TRANSISTOR STRUCTURE WITH ABRUPT SOURCE/DRAIN JUNCTIONS
Title (en)
FIELD EFFECT TRANSISTOR STRUCTURE WITH ABRUPT SOURCE/DRAIN JUNCTIONS
Title (de)
FELDEFFEKTTRANSISTORSTRUKTUR MIT ABRUPTEN SOURCE/DRAIN-ÜBERGANGEN
Title (fr)
STRUCTURE DE TRANSISTOR A EFFET DE CHAMP AUX JONCTIONS SOURCE/DRAIN ABRUPTES
Publication
Application
Priority
- US 9926224 W 19991105
- US 19107698 A 19981112
Abstract (en)
[origin: WO0030169A1] Microelectronic structures embodying the present invention include a field effect transistor (FET) having highly conductive source/drain extensions. Formation of such highly conductive source/drain extensions includes forming a passivated recess which is back filled by epitaxial deposition of doped material to form the source/drain junctions. The recesses include a laterally extending region that underlies a portion of the gate structure. Such a lateral extension may underlie a sidewall spacer (108) adjacent to the vertical sidewalls of the gate electrode (106), or may extend further into the channel portion of a FET such that the lateral recess underlies the gate electrode portion of the gate structure. In one embodiment the recess is back filled by an in-situ epitaxial deposition of a bilayer of oppositely doped material. In this way, a very abrupt junction is achieved that provides a relatively low resistance source/drain extension and further provides good off-state subthreshold leakage characteristics. Alternative embodiments can be implemented with a back filled recess of a single conductivity type.
IPC 1-7
IPC 8 full level
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/417 (2006.01); H01L 21/20 (2006.01)
CPC (source: EP KR US)
H01L 21/18 (2013.01 - KR); H01L 29/0847 (2013.01 - EP US); H01L 29/1083 (2013.01 - EP); H01L 29/16 (2013.01 - EP); H01L 29/161 (2013.01 - EP); H01L 29/41766 (2013.01 - EP); H01L 29/41783 (2013.01 - EP); H01L 29/66477 (2013.01 - EP); H01L 29/66621 (2013.01 - EP); H01L 29/66636 (2013.01 - EP); H01L 21/02532 (2013.01 - US); H01L 21/02634 (2013.01 - US); H01L 29/665 (2013.01 - EP); H01L 29/66545 (2013.01 - EP)
Citation (search report)
See references of WO 0030169A1
Designated contracting state (EPC)
DE GB IE
DOCDB simple family (publication)
WO 0030169 A1 20000525; AU 1470200 A 20000605; EP 1147552 A1 20011024; IL 143078 A0 20020421; JP 2002530864 A 20020917; KR 20010080432 A 20010822
DOCDB simple family (application)
US 9926224 W 19991105; AU 1470200 A 19991105; EP 99972373 A 19991105; IL 14307899 A 19991105; JP 2000583081 A 19991105; KR 20017006013 A 20010511