EP 1149384 A1 20011031 - METHOD FOR FUNCTIONALLY TESTING MEMORY CELLS OF AN INTEGRATED SEMICONDUCTOR MEMORY
Title (en)
METHOD FOR FUNCTIONALLY TESTING MEMORY CELLS OF AN INTEGRATED SEMICONDUCTOR MEMORY
Title (de)
VERFAHREN ZUR FUNKTIONSÜBERPRÜFUNG VON SPEICHERZELLEN EINES INTEGRIERTEN HALBLEITERSPEICHERS
Title (fr)
PROCEDE POUR CONTROLER LE FONCTIONNEMENT DE CELLULES MEMOIRES D'UNE MEMOIRE A SEMICONDUCTEURS INTEGRES
Publication
Application
Priority
- DE 0000283 W 20000201
- DE 19904375 A 19990203
Abstract (en)
[origin: WO0046810A1] According to a method for functionally testing memory cells (MC) of an integrated semiconductor memory, a first group (1) of memory cells is tested. The test results (A, B) are copied at least three times and temporarily stored in a second group (2) of memory cells (MC), separately for each memory cell tested. The copies of each of the test results (A, B) are then compared and evaluated. The addresses of the respective memory cells of the second group (2) are determined by means of an address transformation (T) which is designed in such a way that significant clusters of functional errors in a defective second group (2) of memory cells (MC) do not affect the result of the test procedure.
IPC 1-7
IPC 8 full level
G01R 31/28 (2006.01); G11C 29/10 (2006.01); G11C 29/12 (2006.01); G11C 29/36 (2006.01)
CPC (source: EP KR US)
G11C 29/00 (2013.01 - KR); G11C 29/10 (2013.01 - EP US); G11C 29/36 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0046810 A1 20000810; CN 1156854 C 20040707; CN 1339163 A 20020306; DE 19904375 A1 20000928; DE 19904375 C2 20010104; EP 1149384 A1 20011031; JP 2002536777 A 20021029; JP 3725786 B2 20051214; KR 100436484 B1 20040622; KR 20010101988 A 20011115; TW 469435 B 20011221; US 2002026608 A1 20020228; US 6560731 B2 20030506
DOCDB simple family (application)
DE 0000283 W 20000201; CN 00803390 A 20000201; DE 19904375 A 19990203; EP 00908966 A 20000201; JP 2000597807 A 20000201; KR 20017009842 A 20010803; TW 89101808 A 20000222; US 92247501 A 20010803