EP 1149408 A1 20011031 - MICROELECTRONIC STRUCTURE
Title (en)
MICROELECTRONIC STRUCTURE
Title (de)
MIKROELEKTRONISCHE STRUKTUR
Title (fr)
STRUCTURE MICRO-ELECTRONIQUE
Publication
Application
Priority
- DE 9903832 W 19991201
- DE 19857039 A 19981210
Abstract (en)
[origin: DE19857039A1] Disclosed is a microelectronic structure comprising a first conductive layer (20, 25) which prevents an oxygen diffusion at said structure. According to the invention, the first conductive layer (20, 25) consists of a base material and at least one oxygen-binding admixture which is provided with at least one element from the fourth subgroup or lanthane group. In a preferred embodiment, the microelectronic structure is used in semiconductor storage components with a metal oxide dielectric as condenser dielectric.
IPC 1-7
IPC 8 full level
H01L 21/02 (2006.01); H10B 20/00 (2023.01)
CPC (source: EP KR US)
H01L 28/60 (2013.01 - EP US); H01L 28/75 (2013.01 - EP US); H10B 12/00 (2023.02 - KR); H01L 28/55 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
DE 19857039 A1 20000621; CN 1179396 C 20041208; CN 1334960 A 20020206; EP 1149408 A1 20011031; JP 2002532872 A 20021002; KR 20010080742 A 20010822; US 2002017676 A1 20020214; US 6377311 B1 20020423; WO 0034988 A1 20000615
DOCDB simple family (application)
DE 19857039 A 19981210; CN 99816134 A 19991201; DE 9903832 W 19991201; EP 99964386 A 19991201; JP 2000587359 A 19991201; KR 20017007231 A 20010609; US 45821999 A 19991209; US 87873501 A 20010611