EP 1153424 A1 20011114 - CAPACITOR ELECTRODE STRUCTURE
Title (en)
CAPACITOR ELECTRODE STRUCTURE
Title (de)
KONDENSATORELEKTRODENANORDNUNG
Title (fr)
STRUCTURE ELECTRODE DE CONDENSATEUR
Publication
Application
Priority
- DE 9904081 W 19991222
- DE 19860080 A 19981223
- DE 19909295 A 19990303
Abstract (en)
[origin: WO0039842A1] The invention relates to a microelectronic structure. In said structure, an oxygen-containing iridium layer (25) is embedded between a silicon-containing layer (8, 20) and an oxygen barrier layer (30). Said iridium layer is especially produced by a sputter process in an oxygen atmosphere with a low oxygen content. The oxygen-containing iridium layer (25) is stable at temperatures up to 800 DEG C and withstands the formation of iridium silicide upon contact with the silicon-containing layer (20). Such microelectronic structures are preferably used in semiconductor memories.
IPC 1-7
IPC 8 full level
C23C 14/34 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/8246 (2006.01); H01L 27/105 (2006.01)
CPC (source: EP KR US)
H01L 27/04 (2013.01 - KR); H01L 28/60 (2013.01 - EP US); H01L 28/75 (2013.01 - EP US); H01L 21/28568 (2013.01 - EP US); H01L 28/55 (2013.01 - EP US)
Citation (search report)
See references of WO 0039842A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
WO 0039842 A1 20000706; EP 1153424 A1 20011114; JP 2002533953 A 20021008; JP 3665570 B2 20050629; KR 100430324 B1 20040503; KR 20010109274 A 20011208; US 2002070404 A1 20020613; US 6573542 B2 20030603
DOCDB simple family (application)
DE 9904081 W 19991222; EP 99967896 A 19991222; JP 2000591655 A 19991222; KR 20017008073 A 20010623; US 89111401 A 20010625