Title (en)

MOS TRANSISTOR WITH DYNAMIC THRESHOLD VOLTAGE EQUIPPED WITH A CURRENT LIMITING DEVICE AND METHOD FOR MAKING SAME

Title (de)

MOS-TRANSISTOR MIT DYNAMISCHER SCHWELLENSPANNUNG VERSEHEN MIT EINEM STROMBEGRENZER UND DAS HERSTELLUNGSVERFAHREN EINES DERARTIGEN TRANSISTORS

Title (fr)

TRANSISTOR MOS A TENSION DE SEUIL DYNAMIQUE EQUIPE D'UN LIMITEUR DE COURANT, ET PROCEDE DE REALISATION D'UN TEL TRANSISTOR

Publication

EP 1153435 A1 20011114 (FR)

Application

EP 00901716 A 20000204

Priority

• FR 0000268 W 20000204
• FR 9901369 A 19990205

Abstract (en)

[origin: FR2789519A1] The invention concerns a semiconductor device comprising on a substrate: a first MOS transistor (10) with dynamic threshold voltage, with a gate (116), and a channel having one first type of conductivity, and a current limiting element (20) connected between said first transistor gate and channel. The invention is characterised in that said first transistor is provided with a first zone (160) doped with the first type of conductivity, connected to the channel, and the current limiting element comprises a second zone (124) doped with a second type of conductivity and electrically connected to the first zone by an ohmic connection. The invention is useful for producing CMOS circuits.

IPC 1-7

H01L 27/12; H01L 21/84

IPC 8 full level

H01L 27/06 (2006.01); H01L 21/84 (2006.01); H01L 27/08 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01)

CPC (source: EP US)

H01L 21/84 (2013.01 - EP US); H01L 27/1203 (2013.01 - EP US); Y10S 257/903 (2013.01 - EP US); Y10S 257/904 (2013.01 - EP US)

Citation (search report)

See references of WO 0046858A1

Designated contracting state (EPC)

DE GB IT

DOCDB simple family (publication)

FR 2789519 A1 20000811; FR 2789519 B1 20030328; EP 1153435 A1 20011114; JP 2002536833 A 20021029; US 6787850 B1 20040907; WO 0046858 A1 20000810

DOCDB simple family (application)

FR 9901369 A 19990205; EP 00901716 A 20000204; FR 0000268 W 20000204; JP 2000597843 A 20000204; US 89012001 A 20010727