EP 1155171 A1 20011121 - METHOD FOR GROWING AN $G(A)-SIC VOLUME SINGLE CRYSTAL
Title (en)
METHOD FOR GROWING AN $G(A)-SIC VOLUME SINGLE CRYSTAL
Title (de)
VERFAHREN ZUM ZÜCHTEN EINES $G(A)-SIC-VOLUMENEINKRISTALLS
Title (fr)
PROCEDE DE CROISSANCE D'UN MONOCRISTAL VOLUMIQUE DE CARBURE DE SILICIUM ALPHA
Publication
Application
Priority
- DE 0000446 W 20000217
- DE 19907143 A 19990219
Abstract (en)
[origin: WO0049207A1] The invention relates to a method for growing an alpha-SiC volume single crystal. The volume single crystal is produced from a SiC gaseous phase by depositing SiC on a SiC nucleus crystal (1). The aim of the invention is to reproducibly grow a SiC volume single crystal of the type 15R without restricting the nucleus crystal. To this end, the deposit is carried out under a uniaxial tensile stress which encloses a given angle (5) together with the [0001]axis (2) of the volume single crystal in such a way that a rhombohedronic crystal is produced.
IPC 1-7
IPC 8 full level
C30B 23/00 (2006.01); C30B 29/36 (2006.01)
CPC (source: EP US)
C30B 23/00 (2013.01 - EP US); C30B 29/36 (2013.01 - EP US)
Citation (search report)
See references of WO 0049207A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0049207 A1 20000824; CA 2368380 A1 20000824; CA 2368380 C 20080729; DE 50002072 D1 20030612; EP 1155171 A1 20011121; EP 1155171 B1 20030507; JP 2002537209 A 20021105; JP 4614539 B2 20110119; US 2002014199 A1 20020207; US 6689212 B2 20040210
DOCDB simple family (application)
DE 0000446 W 20000217; CA 2368380 A 20000217; DE 50002072 T 20000217; EP 00910531 A 20000217; JP 2000599926 A 20000217; US 93304901 A 20010820