EP 1155460 A4 20061206 - QUANTUM WELL THERMOELECTRIC MATERIAL ON VERY THIN SUBSTRATE
Title (en)
QUANTUM WELL THERMOELECTRIC MATERIAL ON VERY THIN SUBSTRATE
Title (de)
THERMOELEKTRISCHES QUANTENTOPF-MATERIAL AUF SEHR DÜNNEM SUBSTRAT
Title (fr)
MATERIAU THERMOELECTRIQUE A PUITS QUANTIQUE APPLIQUE SUR UN SUBSTRAT TRES MINCE
Publication
Application
Priority
- US 9926996 W 19991112
- US 19209798 A 19981113
- US 19209898 A 19981113
Abstract (en)
[origin: WO0030185A1] Thermoelectric elements (62A, 64A, 66A, 62B, 64B, and 66B) for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin substrate. The layers of semiconductor material aternate between barrier semiconductor material and conducting semiconductor material creating quantum wells within the thin layers of conducting semiconductor material. The conducting semiconductor material is doped to create conducting properties. The substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability and strong and flexible. In a preferred embodiment, the thin organic substrate is a thin polyimide film (specifically Kapton3) coated with an even thinner film of crystalline silicon. The substrate is about .3 mills (127 micons) thick. The crystalline silicon layer is about 0.1 micron thick. This embodiment includes on each side of the thin Kapton substrate about 3,000 alternating layers of silicon and silicon-germanium, each layer being about 100 ANGSTROM and the total thickness of the layers being about 30 microns.
IPC 1-7
H01L 35/00; H01L 35/28; H01L 35/30; H01L 31/0328; F25D 25/00
IPC 8 full level
C23C 14/06 (2006.01); H01L 29/06 (2006.01); H01L 35/14 (2006.01); H01L 35/22 (2006.01); H01L 35/26 (2006.01); H01L 35/32 (2006.01); H01L 35/34 (2006.01); H02N 11/00 (2006.01)
CPC (source: EP)
H10N 10/855 (2023.02); H10N 10/857 (2023.02)
Citation (search report)
- [X] WO 9842033 A1 19980924 - MASSACHUSETTS INST TECHNOLOGY [US]
- [A] WO 9844562 A1 19981008 - RES TRIANGLE INST [US], et al
- [A] WO 9416465 A1 19940721 - MASSACHUSETTS INST TECHNOLOGY [US]
- [A] DE 29723309 U1 19980910 - D T S GES ZUR FERTIGUNG VON DU [DE]
- [X] WAGNER A V ET AL: "Sputter deposition of semiconductor superlattices for thermoelectric applications", INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES. SYMPOSIUM MATER. RES. SOC PHILADELPHIA, PA, USA, 1997, pages 467 - 472, XP008070343
- [X] WAGNER A V ET AL: "Synthesis and evaluation of thermoelectric multilayer films", FIFTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS. PROCEEDINGS ICT '96.(CAT. NO.96TH8169) IEEE NEW YORK, NY, USA, 1996, pages 459 - 463, XP002403897, ISBN: 0-7803-3221-0
- [A] GHAMATY S ET AL: "Thermoelectric performance of B4C/B9C heterostructures", THERMOELECTRICS, 1996., FIFTEENTH INTERNATIONAL CONFERENCE ON PASADENA, CA, USA 26-29 MARCH 1996, NEW YORK, NY, USA,IEEE, US, 26 March 1996 (1996-03-26), pages 469 - 473, XP010198920, ISBN: 0-7803-3221-0
- [A] GHAMATY S ET AL: "Thermal and electrical properties of Si/Si0.8Ge0.2 and B4C/B9C films", SEVENTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS. PROCEEDINGS ICT98 (CAT. NO.98TH8365) IEEE PISCATAWAY, NJ, USA, 24 May 1998 (1998-05-24), pages 206 - 209, XP002403898, ISBN: 0-7803-4907-5
- [PA] GHAMATY S ET AL: "Development of quantum well thermoelectric device", EIGHTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS. PROCEEDINGS, ICT'99 (CAT. NO.99TH8407) IEEE PISCATAWAY, NJ, USA, 1999, pages 485 - 488, XP010379428, ISBN: 0-7803-5451-6
- See references of WO 0030185A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0030185 A1 20000525; WO 0030185 A8 20000921; AU 1723800 A 20000605; EP 1155460 A1 20011121; EP 1155460 A4 20061206; JP 2002530874 A 20020917; JP 4903307 B2 20120328
DOCDB simple family (application)
US 9926996 W 19991112; AU 1723800 A 19991112; EP 99960340 A 19991112; JP 2000583095 A 19991112