EP 1157413 A2 20011128 - METHOD FOR PRODUCING HIGHLY DOPED SEMICONDUCTOR COMPONENTS
Title (en)
METHOD FOR PRODUCING HIGHLY DOPED SEMICONDUCTOR COMPONENTS
Title (de)
VERFAHREN ZUR HERSTELLUNG HOCHDOTIERTER HALBLEITERBAUELEMENTE
Title (fr)
PROCEDE DE PRODUCTION DE COMPOSANTS SEMI-CONDUCTEURS HAUTEMENT DOPES
Publication
Application
Priority
- DE 0000546 W 20000225
- DE 19908400 A 19990226
Abstract (en)
[origin: DE19908400A1] The invention relates to a method for producing semiconductor components. At least one highly doped area is introduced into a wafer. A solid glass layer (2; 4; 2, 3; 4, 5) which is provided with a doping agent is mounted on at least one of the two sides of a semiconductor wafer (1). In a further step, the wafer is heated to high temperatures in such a way that the doping agent leaves the glass layer and penetrates deep into the wafer in order to produce the at least one doped area (10; 11). In a further step, the glass layer is removed. The inventive method is used for producing homogeneous, highly doped areas. Said areas can be introduced through the two sides of the wafer and can have different doping types.
IPC 1-7
IPC 8 full level
H01L 21/225 (2006.01); H01L 21/329 (2006.01)
CPC (source: EP US)
H01L 21/2255 (2013.01 - EP US); H01L 29/66136 (2013.01 - EP US)
Citation (search report)
See references of WO 0052738A2
Designated contracting state (EPC)
DE FR IT
DOCDB simple family (publication)
DE 19908400 A1 20000907; EP 1157413 A2 20011128; JP 2002538619 A 20021112; US 6806173 B1 20041019; WO 0052738 A2 20000908; WO 0052738 A3 20001221
DOCDB simple family (application)
DE 19908400 A 19990226; DE 0000546 W 20000225; EP 00912386 A 20000225; JP 2000603076 A 20000225; US 91440401 A 20011213