Global Patent Index - EP 1159763 A1

EP 1159763 A1 2001-12-05 - MULTI-LAYER DIODES AND METHOD OF PRODUCING SAME

Title (en)

MULTI-LAYER DIODES AND METHOD OF PRODUCING SAME

Title (de)

MEHRSCHICHTDIODEN SOWIE VERFAHREN ZUR HERSTELLUNG VON MEHRSCHICHTDIODEN

Title (fr)

DIODES A COUCHES MULTIPLES ET PROCEDE PERMETTANT DE LES PRODUIRE

Publication

EP 1159763 A1 (DE)

Application

EP 00915114 A

Priority

  • DE 0000508 W
  • DE 19908399 A

Abstract (en)

[origin: DE19908399A1] According to the invention the emitter short-circuit structure of a multi-layer diode is embodied by grooves which separate the top layer (2) of the multi-layer diode. A metal layer (20) deposited thereon electrically short-circuits the top layer and the layer (3) situated below it.

IPC 1-7 (main, further and additional classification)

H01L 29/87; H01L 29/06

IPC 8 full level (invention and additional information)

H01L 27/08 (2006.01); H01L 29/08 (2006.01); H01L 29/87 (2006.01)

CPC (invention and additional information)

H01L 29/87 (2013.01); H01L 27/0814 (2013.01); H01L 27/0817 (2013.01); H01L 29/0839 (2013.01)

Citation (search report)

See references of WO 0052761A1

Designated contracting state (EPC)

DE FR

EPO simple patent family

DE 19908399 A1 20000907; DE 19908399 B4 20040902; EP 1159763 A1 20011205; JP 2002538627 A 20021112; US 6518101 B1 20030211; WO 0052761 A1 20000908

INPADOC legal status


2007-02-21 [18D] APPLICATION DEEMED TO BE WITHDRAWN

- Effective date: 20061004

2004-05-12 [RBV] DESIGNATED CONTRACTING STATES (CORRECTION)

- Designated State(s): DE FR

2001-12-05 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20010926

2001-12-05 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE