Global Patent Index - EP 1160851 A2

EP 1160851 A2 20011205 - Method for fabricating a multilayer semiconductor device

Title (en)

Method for fabricating a multilayer semiconductor device

Title (de)

Verfahren zur Herstellung einer mehrschichtigen Halbleitervorrichtung

Title (fr)

Méthode de fabrication d'un dispositif semiconducteur multicouche

Publication

EP 1160851 A2 20011205 (EN)

Application

EP 01112083 A 20010528

Priority

JP 2000159707 A 20000530

Abstract (en)

Provided is a method for fabricating a compound semiconductor multilayer epitaxial substrate comprising a plurality of epitaxial layers, comprising the steps of determining at least one of the thickness, impurity concentration, and composition of an epitaxial layer comprising the multilayer epitaxial substrate by theoretical calculation, the theoretical calculation describing on electric field and charge distribution inside the epitaxial layer, and performing epitaxy of the epitaxial layer according to the theoretical calculation of the thickness, impurity concentration and/or composition of the epitaxial layer so that measurable electric characteristice of the substrate predetermined by the calculation are satisfied. The method can reduce the fabrication process and also can be applied to manufacture a multilayer epitaxial substrate having a unique structure.

IPC 1-7

H01L 21/335; H01L 29/778

IPC 8 full level

C30B 29/40 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01); H01L 21/335 (2006.01); H01L 21/338 (2006.01); H01L 21/66 (2006.01); H01L 29/812 (2006.01); H01L 29/778 (2006.01)

CPC (source: EP KR US)

H01L 21/0237 (2013.01 - EP US); H01L 21/02395 (2013.01 - EP US); H01L 21/02463 (2013.01 - EP US); H01L 21/02505 (2013.01 - EP US); H01L 21/02546 (2013.01 - EP US); H01L 21/0262 (2013.01 - EP US); H01L 21/20 (2013.01 - KR)

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 1160851 A2 20011205; EP 1160851 A3 20060614; JP 2001338884 A 20011207; JP 4757370 B2 20110824; KR 20010110115 A 20011212; TW I228759 B 20050301; US 2001051382 A1 20011213; US 6569693 B2 20030527

DOCDB simple family (application)

EP 01112083 A 20010528; JP 2000159707 A 20000530; KR 20010029610 A 20010529; TW 90112503 A 20010524; US 86548201 A 20010529