EP 1160851 A2 20011205 - Method for fabricating a multilayer semiconductor device
Title (en)
Method for fabricating a multilayer semiconductor device
Title (de)
Verfahren zur Herstellung einer mehrschichtigen Halbleitervorrichtung
Title (fr)
Méthode de fabrication d'un dispositif semiconducteur multicouche
Publication
Application
Priority
JP 2000159707 A 20000530
Abstract (en)
Provided is a method for fabricating a compound semiconductor multilayer epitaxial substrate comprising a plurality of epitaxial layers, comprising the steps of determining at least one of the thickness, impurity concentration, and composition of an epitaxial layer comprising the multilayer epitaxial substrate by theoretical calculation, the theoretical calculation describing on electric field and charge distribution inside the epitaxial layer, and performing epitaxy of the epitaxial layer according to the theoretical calculation of the thickness, impurity concentration and/or composition of the epitaxial layer so that measurable electric characteristice of the substrate predetermined by the calculation are satisfied. The method can reduce the fabrication process and also can be applied to manufacture a multilayer epitaxial substrate having a unique structure.
IPC 1-7
IPC 8 full level
C30B 29/40 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01); H01L 21/335 (2006.01); H01L 21/338 (2006.01); H01L 21/66 (2006.01); H01L 29/812 (2006.01); H01L 29/778 (2006.01)
CPC (source: EP KR US)
H01L 21/0237 (2013.01 - EP US); H01L 21/02395 (2013.01 - EP US); H01L 21/02463 (2013.01 - EP US); H01L 21/02505 (2013.01 - EP US); H01L 21/02546 (2013.01 - EP US); H01L 21/0262 (2013.01 - EP US); H01L 21/20 (2013.01 - KR)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 1160851 A2 20011205; EP 1160851 A3 20060614; JP 2001338884 A 20011207; JP 4757370 B2 20110824; KR 20010110115 A 20011212; TW I228759 B 20050301; US 2001051382 A1 20011213; US 6569693 B2 20030527
DOCDB simple family (application)
EP 01112083 A 20010528; JP 2000159707 A 20000530; KR 20010029610 A 20010529; TW 90112503 A 20010524; US 86548201 A 20010529