EP 1160882 A3 20060104 - A photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
Title (en)
A photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
Title (de)
Photonische Vorrichtung, Substrat zur Herstellung einer photonischen Vorrichtung, Herstellungsverfahren einer solchen Vorrichtung und Herstellungsverfahren eines solchen Substrats
Title (fr)
Dispositif photonique, substrat pour la fabrication d'un dispositif photonique, procédé de fabrication d'un tel dispositif et procédé de fabrication d'un tel substrat
Publication
Application
Priority
- JP 2000149190 A 20000522
- JP 2000149191 A 20000522
- JP 2000293763 A 20000927
- JP 2000293846 A 20000927
- JP 2001114065 A 20010412
- JP 2001114067 A 20010412
Abstract (en)
[origin: EP1160882A2] A buffer layer with a composition of AlaGabIncN (a+b+c=1, a, b, c‰¥0) and a multilayered thin films with a composition of AlxGayInzN (x+y+z=1 x, y, z‰¥0) are formed in turn on a substrate. The Al component of the Al component-minimum portion of the buffer layer is set to be larger than that of at least the thickest layer of the multilayered thin films. The Al component of the buffer layer is decreased continuously or stepwise from the side of the substrate to the side of the multilayered thin films therein.
IPC 8 full level
H01L 21/20 (2006.01); H01L 21/205 (2006.01); H01L 31/0304 (2006.01); H01L 31/105 (2006.01); H01L 33/00 (2010.01)
CPC (source: EP US)
H01L 21/0242 (2013.01 - EP US); H01L 21/02458 (2013.01 - EP US); H01L 21/0254 (2013.01 - EP US); H01L 21/0262 (2013.01 - EP US); H01L 31/105 (2013.01 - EP US); H01L 33/007 (2013.01 - EP US); H01L 33/0075 (2013.01 - EP US)
Citation (search report)
- [X] US 5739554 A 19980414 - EDMOND JOHN A [US], et al
- [A] US 5393993 A 19950228 - EDMOND JOHN A [US], et al
- [A] DE 19905517 A1 19991209 - HEWLETT PACKARD CO [US]
- [A] EP 0731512 A2 19960911 - HEWLETT PACKARD CO [US]
- [A] US 5838706 A 19981117 - EDMOND JOHN ADAM [US], et al
- [X] PATENT ABSTRACTS OF JAPAN vol. 1996, no. 01 31 January 1996 (1996-01-31)
- [A] PATENT ABSTRACTS OF JAPAN vol. 1999, no. 10 31 August 1999 (1999-08-31)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
EP 1160882 A2 20011205; EP 1160882 A3 20060104; EP 1160882 B1 20181205; CN 1193439 C 20050316; CN 1344037 A 20020410; KR 20010107604 A 20011207; US 2002020850 A1 20020221; US 6495894 B2 20021217
DOCDB simple family (application)
EP 01112409 A 20010521; CN 01137289 A 20010522; KR 20010027650 A 20010521; US 85492501 A 20010514