EP 1161770 A1 20011212 - DRAM CELL ARRANGEMENT AND METHOD FOR PRODUCING THE SAME
Title (en)
DRAM CELL ARRANGEMENT AND METHOD FOR PRODUCING THE SAME
Title (de)
DRAM-ZELLENANORDNUNG UND VERFAHREN ZU DEREN HERSTELLUNG
Title (fr)
AGENCEMENT DE CELLULES DE MEMOIRE RAM DYNAMIQUE, ET SON PROCEDE DE REALISATION
Publication
Application
Priority
- DE 0000756 W 20000310
- DE 19911148 A 19990312
Abstract (en)
[origin: DE19911148C1] A DRAM cell array, with single vertical transistor memory cells having buried bit lines and low space requirement, is new. A DRAM cell array, in which each memory cell consists of a vertical transistor and a capacitor, comprises: (a) a substrate (1) with parallel trenches, each containing a bit line in its lower portion; (b) a stripe-like recess which extends parallel to the trench on a first side wall of the trench lower portion and which is provided with insulation between the bit line and the substrate; (c) a further insulation on the upper trench side walls and the upper face of the bit line; (d) word lines (W) extending transversely to the bit lines and separated from the substrate by an insulating layer (I1); (e) alternating word line cuffs and insulating structures arranged over the bit lines in the trenches; (f) upper (S/Do) and lower transistor source/drain regions arranged between the trenches and under the word lines (W); (g) further insulating structures (I6) in the substrate for separating the upper source/drain regions (S/Do) of adjacent transistors; and (h) memory cell capacitors connected to the upper source/drain regions (S/Do). An Independent claim is also included for production of the above DRAM cell array.
IPC 1-7
IPC 8 full level
H10B 12/00 (2023.01)
CPC (source: EP KR US)
H10B 12/053 (2023.02 - EP US); H10B 12/31 (2023.02 - EP US); H10B 12/34 (2023.02 - EP US); H10B 99/00 (2023.02 - KR)
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
DE 19911148 C1 20000518; CN 1150612 C 20040519; CN 1343371 A 20020403; EP 1161770 A1 20011212; JP 2002539642 A 20021119; JP 3786836 B2 20060614; KR 100403442 B1 20031030; KR 20010104379 A 20011124; TW 461086 B 20011021; US 2002079527 A1 20020627; US 6504200 B2 20030107; WO 0055904 A1 20000921
DOCDB simple family (application)
DE 19911148 A 19990312; CN 00804949 A 20000310; DE 0000756 W 20000310; EP 00916811 A 20000310; JP 2000606049 A 20000310; KR 20017011606 A 20010912; TW 89103596 A 20000301; US 95124301 A 20010912