EP 1163311 A1 20011219 - WORKING LIQUIDS AND METHODS FOR MODIFYING STRUCTURED WAFERS SUITED FOR SEMICONDUCTOR FABRICATION
Title (en)
WORKING LIQUIDS AND METHODS FOR MODIFYING STRUCTURED WAFERS SUITED FOR SEMICONDUCTOR FABRICATION
Title (de)
BEARBEITUNGSFLÜSSIGKEIT UND VERFAHREN ZUR MODIFIKATION VON STRUTURIERTEN HALBLEITERSCHEIBEN ZUR HERSTELLUNG VON HALBLEITERN
Title (fr)
LIQUIDES ACTIFS ET PROCEDES POUR MODIFIER DES PLAQUETTES STRUCTUREES APTES A LA FABRICATION DE SEMI-CONDUCTEURS
Publication
Application
Priority
- US 9912762 W 19990608
- US 26620899 A 19990310
Abstract (en)
[origin: WO0053691A1] A family of working liquids useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working liquids, and semiconductor wafers made according the foregoing process. The working liquid of the invention is a solution of initial components, the components comprising: an oxidizing agent; an ionic buffer; a passivating agent; a chelating agent selected from iminodiacetic acid and salts thereof; and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deployed over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working liquid; and c) relatively moving the wafer while the second material is in contact with the abrasive until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.
IPC 1-7
IPC 8 full level
C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/321 (2006.01)
CPC (source: EP KR US)
C09G 1/02 (2013.01 - EP KR US); C09K 3/1463 (2013.01 - EP KR US); H01L 21/3212 (2013.01 - EP US); B24B 37/044 (2013.01 - KR); B24B 37/24 (2013.01 - KR); H01L 21/3212 (2013.01 - KR)
Citation (search report)
See references of WO 0053691A1
Designated contracting state (EPC)
AT DE ES FR GB IT SE
DOCDB simple family (publication)
WO 0053691 A1 20000914; AT E234906 T1 20030415; AU 4336399 A 20000928; BR 9917199 A 20020108; CN 1141353 C 20040310; CN 1337983 A 20020227; DE 69906155 D1 20030424; DE 69906155 T2 20040212; EP 1163311 A1 20011219; EP 1163311 B1 20030319; HK 1043807 A1 20020927; HK 1043807 B 20040305; JP 2002538284 A 20021112; JP 4074434 B2 20080409; KR 100577127 B1 20060510; KR 20010110655 A 20011213; MY 117212 A 20040531; TW I260342 B 20060821; US 6238592 B1 20010529
DOCDB simple family (application)
US 9912762 W 19990608; AT 99973765 T 19990608; AU 4336399 A 19990608; BR 9917199 A 19990608; CN 99816442 A 19990608; DE 69906155 T 19990608; EP 99973765 A 19990608; HK 02103812 A 20020521; JP 2000603322 A 19990608; KR 20017011435 A 20010908; MY PI20000959 A 20000310; TW 89103967 A 20000306; US 26620899 A 19990310