EP 1166339 A1 20020102 - METHOD OF PROCESSING A MONOCRYSTALLINE SEMICONDUCTOR DISK AND PARTIALLY PROCESSED SEMICONDUCTOR DISK

Title (en)

METHOD OF PROCESSING A MONOCRYSTALLINE SEMICONDUCTOR DISK AND PARTIALLY PROCESSED SEMICONDUCTOR DISK

Title (de)

VERFAHREN ZUR PROZESSIERUNG EINER MONOKRISTALLINEN HALBLEITERSCHEIBE UND TEILWEISE PROZESSIERTE HALBLEITERSCHEIBE

Title (fr)

PROCEDE POUR TRAITER UNE PLAQUETTE DE SEMI-CONDUCTEUR MONOCRISTALLINE ET PLAQUETTE DE SEMI-CONDUCTEUR PARTIELLEMENT TRAITEE

Publication

EP 1166339 A1 20020102 (DE)

Application

EP 00929254 A 20000324

Priority

DE 0000938 W 20000324
DE 19915078 A 19990401

Abstract (en)

[origin: DE19915078A1] The invention relates to a method for processing a monocrystalline silicon semiconductor disk (1), which method comprises an annealing step carried out at a temperature above 550 DEG C. Prior to annealing a protective layer (15) is applied to the rear side of the silicon semiconductor disk so as to prevent the penetration of metal and/or rare-earth metal substances into the silicon semiconductor disk (1) during annealing.

IPC 1-7

H01L 21/02; H01L 21/314; H01L 21/318

IPC 8 full level

H10B 12/00 (2023.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01)

CPC (source: EP KR US)

H01L 21/02 (2013.01 - KR); H01L 21/324 (2013.01 - EP US); H01L 28/55 (2013.01 - EP US); H10B 12/033 (2023.02 - EP US)

Citation (examination)

US 3494809 A 19700210 - ROSS CARL A
DD 286459 A5 19910124 - AKAD WISSENSCHAFTEN DDR [DE]
US 5973386 A 19991026 - HORIKAWA MITSUHIRO [JP]
PATENT ABSTRACTS OF JAPAN vol. 199, no. 712 25 November 1997 (1997-11-25)
See also references of WO 0060646A1

Designated contracting state (EPC)

DE FR GB IE IT

DOCDB simple family (publication)

DE 19915078 A1 20001012; CN 1155054 C 20040623; CN 1346511 A 20020424; EP 1166339 A1 20020102; JP 2002541661 A 20021203; KR 100451451 B1 20041006; KR 20020010589 A 20020204; US 2002086532 A1 20020704; US 6531378 B2 20030311; WO 0060646 A1 20001012

DOCDB simple family (application)

DE 19915078 A 19990401; CN 00805917 A 20000324; DE 0000938 W 20000324; EP 00929254 A 20000324; JP 2000610048 A 20000324; KR 20017012140 A 20010924; US 96857601 A 20011001