EP 1166341 A1 20020102 - A REACTIVE ION ETCHING PROCESS
Title (en)
A REACTIVE ION ETCHING PROCESS
Title (de)
VERFAHREN ZUM REAKTIVEN IONENÄTZEN
Title (fr)
PROCEDE DE GRAVURE IONIQUE REACTIVE
Publication
Application
Priority
- GB 0001231 W 20000330
- GB 9907302 A 19990331
Abstract (en)
[origin: GB2348399A] The reactive ion etching process (RIE) includes control of etchant gas flow rate and pressure, and radio frequency (r.f.) power to provide an etch rate and/or level of material re-deposition that reduces the surface and sidewall roughness in the manufacture of optical waveguides to 5-100 nm having an etch depth greater than 10žm. The etchant gas may be fluorine based eg CHF<SB>3</SB>, C<SB>2</SB>F<SB>6,</SB> SF<SB>6,</SB> CF<SB>4</SB> or CBrF<SB>5</SB> used together with a process gas eg O<SB>2</SB>, Ar, CH<SB>3,</SB> CH<SB>4</SB> or C<SB>2</SB>H<SB>4</SB>, with flow rates of 5-75 sccm and 0-15 sccm respectively with an etchant gas pressure of 5-120 mTorr. The power density range may be 0.16-0.95 Wcm<SP>-2</SP>.
IPC 1-7
IPC 8 full level
G02B 6/136 (2006.01)
CPC (source: EP)
G02B 6/136 (2013.01)
Citation (search report)
See references of WO 0059020A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
GB 2348399 A 20001004; GB 9907302 D0 19990526; AU 3568500 A 20001016; EP 1166341 A1 20020102; GB 0118719 D0 20010926; GB 2363361 A 20011219; GB 2363361 B 20030402; WO 0059020 A1 20001005
DOCDB simple family (application)
GB 9907302 A 19990331; AU 3568500 A 20000330; EP 00914290 A 20000330; GB 0001231 W 20000330; GB 0118719 A 20000330