EP 1166345 A1 20020102 - METHOD FOR PRODUCING A MICROELECTRONIC STRUCTURE
Title (en)
METHOD FOR PRODUCING A MICROELECTRONIC STRUCTURE
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER MIKROELEKTRONISCHEN STRUKTUR
Title (fr)
PROCEDE DE PRODUCTION D'UNE STRUCTURE MICROELECTRONIQUE
Publication
Application
Priority
- DE 0000786 W 20000310
- DE 19911150 A 19990312
Abstract (en)
[origin: DE19911150C1] Microelectronic structure production, comprising physically etching a conductive layer (45) from a substrate (5) such that removed material is transferred onto a layer structure side wall (35), is new. A microelectronic structure production process comprises (a) partially covering a substrate (5) with a layer structure (30) including one or more first conductive layers (15, 20) which extend to the layer structure side wall (35); (b) applying a second conductive layer (45) onto the layer structure and the substrate; and (c) removing the second conductive layer (45) from the substrate by a physical etching process such that the removed material deposits on the layer structure side wall. Preferred Features: The first conductive layer (15, 20) is a barrier and/or bond layer of a titanium nitride/titanium or tantalum nitride/tantalum combination and the second conductive layer (45) consists of Pt. The layer stack (30) is subsequently covered with a dielectric layer of formula ABOx or DOx, where A = one or more of Sr, Bi, Nb, Pb, Zr, La, Li, K, Ca and Ba, B = one or more of Ti, Nb, Ru, Mg, Mn, Zr and Ta, D = Ti or Ta and x = 2 to 12.
IPC 1-7
IPC 8 full level
B81C 1/00 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H10B 12/00 (2023.01); H10B 20/00 (2023.01)
CPC (source: EP KR US)
H01L 21/3213 (2013.01 - KR); H01L 21/32136 (2013.01 - EP US); H01L 28/60 (2013.01 - EP US); H01L 21/02071 (2013.01 - EP US); H01L 28/55 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
DE 19911150 C1 20000420; CN 1156897 C 20040707; CN 1343370 A 20020403; EP 1166345 A1 20020102; JP 2002539608 A 20021119; JP 3889224 B2 20070307; KR 100420461 B1 20040302; KR 20010102453 A 20011115; TW 475223 B 20020201; US 2002155660 A1 20021024; US 2009011556 A9 20090108; WO 0054318 A1 20000914
DOCDB simple family (application)
DE 19911150 A 19990312; CN 00804938 A 20000310; DE 0000786 W 20000310; EP 00930977 A 20000310; JP 2000604447 A 20000310; KR 20017011070 A 20010830; TW 89104426 A 20000925; US 94801001 A 20010905