EP 1166406 A1 20020102 - PASSIVELY MODE-LOCKED SEMICONDUCTOR LASER
Title (en)
PASSIVELY MODE-LOCKED SEMICONDUCTOR LASER
Title (de)
PASSIV-MODENGEKOPPELTER HALBLEITERLASER
Title (fr)
LASER SEMI-CONDUCTEUR A MODES BLOQUES PASSIVEMENT
Publication
Application
Priority
- US 0006928 W 20000317
- US 12492999 P 19990318
Abstract (en)
[origin: WO0055950A1] A miniature ultra-short light pulse source is based on a passively mode-locked semiconductor laser, including a multisegment laser diode (LD) with controllable saturation in absorbing sections(s) and anti-reflection coating on one of its facets, which is used as an active element. A single-mode optical fiber with a Bragg grating (FBG) written into its core is used as an external cavity. Depending on FBG reflectivity spectrum, the device emits a regular train of transform-limited ps-length pulses or linearly chirped ps-length pulses suitable for a time-compression technique.
IPC 1-7
IPC 8 full level
H01S 5/065 (2006.01); H01S 5/14 (2006.01); H01S 5/00 (2006.01); H01S 5/06 (2006.01)
CPC (source: EP)
H01S 5/065 (2013.01); H01S 5/146 (2013.01); H01S 5/0057 (2013.01); H01S 5/0601 (2013.01); H01S 5/0657 (2013.01)
Citation (search report)
See references of WO 0055950A1
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
WO 0055950 A1 20000921; AU 4012000 A 20001004; EP 1166406 A1 20020102
DOCDB simple family (application)
US 0006928 W 20000317; AU 4012000 A 20000317; EP 00919427 A 20000317