EP 1171907 A1 20020116 - METHOD OF PERFORMING PLASMA WARM-UP ON SEMICONDUCTOR WAFERS
Title (en)
METHOD OF PERFORMING PLASMA WARM-UP ON SEMICONDUCTOR WAFERS
Title (de)
VERFAHREN ZUR PLASMA-ERWÄRMUNG VON HALBLEITERSCHEIBEN
Title (fr)
PROCEDE DE RECHAUFFEMENT AU PLASMA DE PLAQUETTES SEMI-CONDUCTRICES
Publication
Application
Priority
- US 0101058 W 20010111
- US 48351200 A 20000113
Abstract (en)
[origin: WO0152310A1] A method for stabilizing the temperature of a semiconductor wafer. In one embodiment, the present invention introduces a semiconductor wafer into an processing environment. Prior to subjecting said semiconductor wafer to a conventional semiconductor process, the present invention performs a plasma warm-up step. The aforementioned plasma warm-up step of the present invention is comprised of the following steps. First, the present invention subjects the semiconductor wafer to an inert gas plasma within the processing environment. Next, the present invention continues to subject the semiconductor wafer to the inert gas plasma until the semiconductor wafer achieves a desired temperature.
IPC 1-7
IPC 8 full level
C23C 16/02 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01)
CPC (source: EP KR)
C23C 16/0209 (2013.01 - EP); H01L 21/02071 (2013.01 - EP); H01L 21/30 (2013.01 - KR)
Citation (search report)
See references of WO 0152310A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 0152310 A1 20010719; EP 1171907 A1 20020116; JP 2003520431 A 20030702; KR 20020019001 A 20020309
DOCDB simple family (application)
US 0101058 W 20010111; EP 01903051 A 20010111; JP 2001552433 A 20010111; KR 20017011571 A 20010912