EP 1171913 A1 20020116 - DAMASCENE STRUCTURE AND METHOD FOR FORMING A DAMASCENE STRUCTURE
Title (en)
DAMASCENE STRUCTURE AND METHOD FOR FORMING A DAMASCENE STRUCTURE
Title (de)
DAMASZENSTRUKTUR UND VERFAHREN ZUR HERSTELLUNG EINER DAMASZENSTRUKTUR
Title (fr)
STRUCTURE DAMASQUINEE ET PROCEDE DE FORMATION D'UNE STRUCTURE DAMASQUINEE
Publication
Application
Priority
- US 0101400 W 20010117
- US 48815400 A 20000120
Abstract (en)
[origin: WO0154191A1] A damascene structure having a reduced overall dielectric constant and a method for forming such a structure is disclosed. In one embodiment, the present embodiment deposits a blanket coating (206, 306) of etch stop layer material over an underlying structure. In the present embodiment, the underlying structure includes a first region (202, 302) to which an interconnect will be subsequently be formed. Next, the present embodiment selectively removes portions of the blanket coating of the etch stop layer material. More specifically, in the present embodiment, the etch stop layer material is removed from above a second region (208, 304) of the underlying structure. In the present embodiment, the second region of the underlying structure will not subsequently have the interconnect formed thereto. In so doing, the present embodiment eliminates the presence of superfluous etch stop layer material. As a result, the overall dielectric constant of the intermetal filmstack is reduced as compared to conventional damascene structures.
IPC 1-7
IPC 8 full level
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC (source: EP KR)
H01L 21/76801 (2013.01 - EP); H01L 21/76802 (2013.01 - EP KR); H01L 21/7681 (2013.01 - EP KR); H01L 21/76834 (2013.01 - EP KR); H01L 23/5222 (2013.01 - EP); H01L 23/5329 (2013.01 - EP KR); H01L 2924/0002 (2013.01 - EP)
Citation (search report)
See references of WO 0154191A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 0154191 A1 20010726; CN 1358329 A 20020710; EP 1171913 A1 20020116; JP 2003520449 A 20030702; KR 20020006030 A 20020118
DOCDB simple family (application)
US 0101400 W 20010117; CN 01800086 A 20010117; EP 01906564 A 20010117; JP 2001553581 A 20010117; KR 20017011918 A 20010919