Title (en)

Electron source device

Title (de)

Elektronenquellenvorrichtung

Title (fr)

Dispositif pour source d'électrons

Publication

EP 1174899 A3 20020918 (EN)

Application

EP 01306009 A 20010712

Priority

US 61787600 A 20000717

Abstract (en)

[origin: EP1174899A2] A self-aligned electron device (10) includes emitter (13), extraction electrode (17), and focus electrode (21) separated by dielectric layers, (11, 15, 19). A single cavity (23) extending through the electrodes and the dielectric layers and terminating at the emitter electrode (13) is formed by a single photolithography step and an etching process. A composite emitter (1) including a base (3) disposed on the emitter electrode (13) and a conical tip (5) disposed on the base (3) and terminating at a vertex V is formed in the cavity (23). The base (3) can be made from materials including titanium, chromium, or doped silicon. The tip (5) can be made from a wide variety of materials including a refractory metal, a metal alloy, a silicon alloy, a carbide, a nitride, or an electroformable metal. The cavity (23) and the composite emitter (1) are self-aligned relative to each other. The dielectric layers can be etched back to reduce or eliminate charge accumulation on cavity-facing portions (43, 45) of the dielectric layers. A composite layer including a dielectric and mechanical strength enhancement layer (15a, 19a) of silicon nitride or silicon carbide and a pull-back layer (15b, 19b) of silicon oxide on top of the etch stop layer can be used to form the dielectric layers. <IMAGE>

IPC 1-7

H01J 3/02

IPC 8 full level

H01J 1/304 (2006.01); H01J 3/02 (2006.01); H01J 29/04 (2006.01); H01J 31/12 (2006.01)

CPC (source: EP)

H01J 3/022 (2013.01)

Citation (search report)

• [XY] EP 1011123 A2 20000621 - SONY CORP [JP]
• [X] EP 0945885 A1 19990929 - SILICON VIDEO CORP [US]
• [Y] US 5469014 A 19951121 - ITOH SHIGEO [JP], et al
• [Y] US 5702281 A 19971230 - HUANG JAMMY CHIN-MING [TW], et al
• [Y] WO 9636061 A1 19961114 - ADVANCED VISION TECH INC [US], et al
• [Y] US 5869169 A 19990209 - JONES GARY W [US]
• [Y] EP 0856868 A2 19980805 - COMMISSARIAT ENERGIE ATOMIQUE [FR]
• [Y] US 5516404 A 19960514 - EISELE IGNAZ [DE], et al
• [Y] US 5731597 A 19980324 - LEE JONG DUK [KR], et al

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

DOCDB simple family (publication)

EP 1174899 A2 20020123; EP 1174899 A3 20020918; CN 1334582 A 20020206; HK 1043433 A1 20020913; JP 2002083555 A 20020322

DOCDB simple family (application)

EP 01306009 A 20010712; CN 01123054 A 20010717; HK 02105161 A 20020711; JP 2001208963 A 20010710