EP 1174915 A2 20020123 - Deposition of a silicon containing insulating thin film
Title (en)
Deposition of a silicon containing insulating thin film
Title (de)
Abscheidung eines siliziumhaltigen, dünnen, isolierenden Films
Title (fr)
Dépôt d'une couche mince isolante contenant du silicium
Publication
Application
Priority
- JP 2000221379 A 20000721
- JP 2000281263 A 20000918
Abstract (en)
The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant to cover a wiring. In construction, an insulating film for covering a wiring is formed on the substrate by plasmanizing a film forming gas, that consists of any one selected from a group consisting of alkoxy compound having Si-H bonds and siloxane having Si-H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O, to react. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/203 (2006.01); C23C 16/40 (2006.01); C23C 16/509 (2006.01); H01L 21/316 (2006.01); H01L 21/768 (2006.01); H01L 21/312 (2006.01)
CPC (source: EP KR US)
C23C 16/401 (2013.01 - EP KR US); C23C 16/509 (2013.01 - EP US); H01L 21/02164 (2013.01 - KR US); H01L 21/02216 (2013.01 - KR US); H01L 21/02274 (2013.01 - US); H01L 21/31612 (2016.02 - US); H01L 21/76829 (2013.01 - EP US); H01L 21/76831 (2013.01 - EP KR US); H01L 21/76834 (2013.01 - EP KR US); H01L 21/02126 (2013.01 - EP); H01L 21/02164 (2013.01 - EP); H01L 21/02203 (2013.01 - EP); H01L 21/02211 (2013.01 - EP); H01L 21/02216 (2013.01 - EP); H01L 21/02274 (2013.01 - EP); H01L 21/3121 (2016.02 - US); H01L 21/3122 (2016.02 - US)
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 1174915 A2 20020123; EP 1174915 A3 20030903; KR 20020009440 A 20020201; TW 503514 B 20020921; US 2002028584 A1 20020307; US 6835669 B2 20041228
DOCDB simple family (application)
EP 01116694 A 20010717; KR 20010043736 A 20010720; TW 90117414 A 20010717; US 90376401 A 20010713