EP 1174929 A2 20020123 - Power semiconductor device and method of manufacturing the same
Title (en)
Power semiconductor device and method of manufacturing the same
Title (de)
Leistungshalbleiterbauelement und dessen Herstellungsverfahren
Title (fr)
Dispositif semiconducteur de puissance et son procédé de fabrication
Publication
Application
Priority
- JP 2000215290 A 20000717
- JP 2001051439 A 20010227
Abstract (en)
A power semiconductor device has a plurality of U-shaped buried layers (8) buried in a drift layer (2) and made of either an insulating material or a semiconductor having a wider bandgap than that of the semiconductor of the drift layer (2). The ratio of the product of the height H of the U-shaped buried layers and the arrangement pitch d to the spacing g between adjacent ones of the U-shaped buried layers (8) is expressed as Hd/g </= 13.2. With this configuration, a power semiconductor device having both a high breakdown voltage and a low on resistance can be realized. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 21/336 (2006.01); H01L 21/74 (2006.01); H01L 27/04 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 29/40 (2006.01); H01L 29/772 (2006.01); H01L 29/872 (2006.01)
CPC (source: EP US)
H01L 21/26533 (2013.01 - EP US); H01L 21/26586 (2013.01 - EP US); H01L 21/74 (2013.01 - EP US); H01L 29/0634 (2013.01 - EP US); H01L 29/0847 (2013.01 - EP US); H01L 29/1095 (2013.01 - EP US); H01L 29/32 (2013.01 - EP US); H01L 29/408 (2013.01 - EP US); H01L 29/66712 (2013.01 - EP US); H01L 29/772 (2013.01 - EP US); H01L 29/7802 (2013.01 - EP US); H01L 29/7806 (2013.01 - EP US); H01L 29/872 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
Designated extension state (EPC)
AL LT LV MK RO SI
DOCDB simple family (publication)
EP 1174929 A2 20020123; JP 2002100772 A 20020405; US 2002005549 A1 20020117; US 6465844 B2 20021015
DOCDB simple family (application)
EP 01116656 A 20010713; JP 2001051439 A 20010227; US 90488801 A 20010716