EP 1184355 B1 20061213 - METHOD FOR MANUFACTURING Si-SiC MEMBER FOR SEMICONDUCTOR HEAT TREATMENT
Title (en)
METHOD FOR MANUFACTURING Si-SiC MEMBER FOR SEMICONDUCTOR HEAT TREATMENT
Title (de)
VERFAHREN ZUR HERSTELLUNG VON SI-SIC-GLIEDERN ZUR THERMISCHEN BEHANDLUNG VON HALBLEITERN
Title (fr)
PROCEDE DE FABRICATION D'ELEMENT Si-SiC POUR TRAITEMENT THERMIQUE DE SEMI-CONDUCTEURS
Publication
Application
Priority
JP 0000840 W 20000215
Abstract (en)
[origin: EP1184355A1] A method for producing a Si-SiC member for heat treatment of semiconductor, which is suitable for heat treatment of a semiconductor wafer with a large diameter and capable of reducing the contamination of the semiconductor wafer as much as possible is provided. Further, a method for producing a Si-SiC member for heat treatment of semiconductor capable of reducing the contamination of the semiconductor wafer as much as possible and causing no slip is provided. This method comprises the first step of kneading a SiC powder having a total metal impurity quantity of 0.2 ppm or less with a molding assistant; the second step of forming a compact from the kneaded raw material; the third step of calcining the compact; the fourth step of purifying the calcined body; and the fifth step of impregnating the purified body with silicon within a sealed vessel provided in a heating furnace body. <IMAGE>
IPC 8 full level
C04B 35/573 (2006.01); C04B 41/50 (2006.01); C04B 41/52 (2006.01); C04B 41/85 (2006.01); C04B 41/88 (2006.01); C04B 41/89 (2006.01); C23C 16/32 (2006.01); H01L 21/205 (2006.01); H01L 21/673 (2006.01)
CPC (source: EP US)
C04B 35/573 (2013.01 - EP US); C04B 41/009 (2013.01 - EP US); C04B 41/5096 (2013.01 - EP US); C04B 41/52 (2013.01 - EP US); C04B 41/85 (2013.01 - EP US); C04B 41/89 (2013.01 - EP US); C04B 2111/00844 (2013.01 - EP US); H01L 21/673 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 1184355 A1 20020306; EP 1184355 A4 20060405; EP 1184355 B1 20061213; DE 60032358 D1 20070125; DE 60032358 T2 20071025; US 6699401 B1 20040302; WO 0160764 A1 20010823
DOCDB simple family (application)
EP 00902988 A 20000215; DE 60032358 T 20000215; JP 0000840 W 20000215; US 95891101 A 20011015