Global Patent Index - EP 1185723 A1

EP 1185723 A1 20020313 - UTILIZATION OF SIH4, SOAK AND PURGE IN DEPOSITION PROCESSES

Title (en)

UTILIZATION OF SIH4, SOAK AND PURGE IN DEPOSITION PROCESSES

Title (de)

VERWENDUNG VON MONOSILAN ALS SPÜL- UND REINIGUNGSMITTEL BEI ABSCHEIDUNGSVERFAHREN

Title (fr)

IMPREGNATION ET PURGE AU SIH4 UTILISEES DANS DES PROCESSUS DE DEPOT

Publication

EP 1185723 A1 20020313 (EN)

Application

EP 00936088 A 20000519

Priority

  • US 0013785 W 20000519
  • US 31499999 A 19990519

Abstract (en)

[origin: WO0070121A1] A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH4, in combination with nitrogen or a noble gas, into the chamber. WSix, is deposited on a semiconductor wafer using a mixture comprising WF6 and dichlorosiliane, and the chamber is subsequently purged of residual WF6 and dichlorosilane by flowing SiH4, in combination with nitrogen or a noble gas, into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH4, in combination with nitrogen, or with nitrogen and a noble gas, into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress.

IPC 1-7

C23C 16/42; C23C 16/56; H01L 21/285; H01L 21/3205

IPC 8 full level

C23C 16/42 (2006.01); C23C 16/56 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01)

CPC (source: EP)

C23C 16/42 (2013.01); C23C 16/56 (2013.01); H01L 21/28518 (2013.01)

Citation (search report)

See references of WO 0070121A1

Designated contracting state (EPC)

DE GB

DOCDB simple family (publication)

WO 0070121 A1 20001123; EP 1185723 A1 20020313; JP 2002544394 A 20021224; TW 469519 B 20011221

DOCDB simple family (application)

US 0013785 W 20000519; EP 00936088 A 20000519; JP 2000618524 A 20000519; TW 89109668 A 20000519