Global Patent Index - EP 1186041 A2

EP 1186041 A2 20020313 - LOW-INDUCTANCE SEMICONDUCTOR COMPONENT

Title (en)

LOW-INDUCTANCE SEMICONDUCTOR COMPONENT

Title (de)

NIEDERINDUKTIVES HALBLEITERBAUELEMENT

Title (fr)

COMPOSANT SEMI-CONDUCTEUR BASSE INDUCTION

Publication

EP 1186041 A2 20020313 (DE)

Application

EP 00934918 A 20000420

Priority

  • DE 0001254 W 20000420
  • DE 19927285 A 19990615

Abstract (en)

[origin: DE19927285A1] The invention relates to a semiconductor component comprising a housing, a substrate board, at least one ceramic substrate which at least on its upper surface is provided with a metallization (10), and at least two switching elements. The switching elements are mounted on the upper surface of the ceramic substrate in an electrically conductive manner and each have load-current connections and a control connection. According to the invention the semiconductor component comprises several external load-current connecting elements which are positioned on one side of said component as well as on a second side which is opposite the first. The load-current connections of the switching elements are electrically connected via supply wires to the external load-current connecting elements which can present a first and a second supply potential. Two switching elements each are arranged next to each other in such a way that the corresponding supply wires extend substantially parallel to two load-current connecting elements which are assigned to same and present different polarities. This results in compensation of the magnetic fields.

IPC 1-7

H01L 23/64; H01L 23/50; H01L 25/07

IPC 8 full level

H01L 23/538 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01)

CPC (source: EP KR US)

H01L 23/5386 (2013.01 - EP US); H01L 24/49 (2013.01 - EP US); H01L 25/072 (2013.01 - EP US); H05K 7/02 (2013.01 - KR); H01L 24/48 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48227 (2013.01 - EP US); H01L 2224/4903 (2013.01 - EP US); H01L 2224/49175 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01023 (2013.01 - EP US); H01L 2924/13055 (2013.01 - EP US); H01L 2924/13091 (2013.01 - EP US); H01L 2924/15787 (2013.01 - EP US); H01L 2924/19041 (2013.01 - EP US); H01L 2924/30107 (2013.01 - EP US)

C-Set (source: EP US)

  1. H01L 2224/49175 + H01L 2224/48227 + H01L 2924/00
  2. H01L 2224/48091 + H01L 2924/00014
  3. H01L 2924/15787 + H01L 2924/00
  4. H01L 2924/00014 + H01L 2224/45099
  5. H01L 2924/00014 + H01L 2224/05599

Designated contracting state (EPC)

DE FR GB IE

DOCDB simple family (publication)

DE 19927285 A1 20001228; DE 19927285 C2 20030522; EP 1186041 A2 20020313; JP 2003502834 A 20030121; JP 3675403 B2 20050727; KR 100458425 B1 20041126; KR 20020021127 A 20020318; US 2002089046 A1 20020711; US 6809411 B2 20041026; WO 0077827 A2 20001221; WO 0077827 A3 20010419

DOCDB simple family (application)

DE 19927285 A 19990615; DE 0001254 W 20000420; EP 00934918 A 20000420; JP 2001503209 A 20000420; KR 20017016143 A 20011215; US 2318901 A 20011217