EP 1192299 A1 20020403 - DOPING OF CRYSTALLINE SUBSTRATES
Title (en)
DOPING OF CRYSTALLINE SUBSTRATES
Title (de)
DOTIEREN VON KRISTALLINEN SUBSTRATEN
Title (fr)
PROCEDE DE DOPAGE DE SUBSTRATS CRISTALLINS
Publication
Application
Priority
- IB 0000694 W 20000524
- ZA 993665 A 19990531
Abstract (en)
[origin: WO0073543A1] A method is provided of producing a doped crystalline substrate having a crystal lattice. The method involves providing a crystalline substrate having a crystal lattice and implanting dopant atoms into the substrate to create a doped layer. Thereafter, or at the same time, ions are implanted into the substrate to create a damaged layer which is separate from the doped layer and contains vacancies and interstitials of the crystalline substrate. The interstitial atoms are caused to diffuse out of the damaged layer into vacancies in the doped layer to reduce the damage therein.
IPC 1-7
IPC 8 full level
H01L 21/265 (2006.01); C30B 31/22 (2006.01); C30B 33/00 (2006.01)
CPC (source: EP)
C30B 29/04 (2013.01); C30B 29/36 (2013.01); C30B 29/403 (2013.01); C30B 31/22 (2013.01); C30B 33/00 (2013.01)
Citation (search report)
See references of WO 0073543A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT
DOCDB simple family (publication)
WO 0073543 A1 20001207; AU 4941900 A 20001218; EP 1192299 A1 20020403; JP 2003500866 A 20030107
DOCDB simple family (application)
IB 0000694 W 20000524; AU 4941900 A 20000524; EP 00931470 A 20000524; JP 2001500026 A 20000524