EP 1192648 A2 20020403 - METAL OXIDE THIN FILMS FOR HIGH DIELECTRIC CONSTANT APPLICATIONS
Title (en)
METAL OXIDE THIN FILMS FOR HIGH DIELECTRIC CONSTANT APPLICATIONS
Title (de)
DÜNNE SCHICHTEN AUS METALLOXID FÜR ANWENDUNGEN, WELCHE HOHE DIELEKTRISCHE KONSTANTEN ERFORDEN
Title (fr)
FINES COUCHES D'OXYDES METALLIQUES POUR APPLICATIONS A CONSTANTE DIELECTRIQUE ELEVEE
Publication
Application
Priority
- US 0015956 W 20000609
- US 32967099 A 19990610
- US 36562899 A 19990802
Abstract (en)
[origin: WO0077832A2] A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulae AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1-x)(TayNb1-y)2O6,where 0</=x</=1.0 and 0</=y</=1.0; (BaxSr1-x)2(TayNb1-y)2O7, where 0</=x</=1.0 and 0</=y</=1.0; and(BaxSr1-x)2Bi2(TayNb1-y)2O10, where 0</=x</=1.0 and 0</=y</=1.0. Thin films according to the invention have a relative dielectric constant >/=40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is <1000ppm, preferably <100.
IPC 1-7
IPC 8 full level
C01G 35/00 (2006.01); G11C 11/22 (2006.01); H01L 21/316 (2006.01); H01L 21/822 (2006.01); H01L 21/8247 (2006.01); H01L 27/04 (2006.01); H01L 27/06 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H10B 12/00 (2023.01); H10B 20/00 (2023.01); H01L 21/314 (2006.01)
CPC (source: EP KR US)
G11C 11/22 (2013.01 - EP); H01L 21/02197 (2013.01 - KR US); H01L 21/02205 (2013.01 - EP KR US); H01L 21/02282 (2013.01 - EP KR US); H01L 27/0629 (2013.01 - EP); H01L 27/10 (2013.01 - KR); H01L 29/78391 (2014.09 - EP); G11C 11/223 (2013.01 - EP); H01L 21/02181 (2013.01 - EP); H01L 21/02194 (2013.01 - EP); H01L 21/02197 (2013.01 - EP)
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
WO 0077832 A2 20001221; WO 0077832 A3 20010907; CN 1358326 A 20020710; EP 1192648 A2 20020403; JP 2003502837 A 20030121; JP 3996767 B2 20071024; KR 20020015048 A 20020227
DOCDB simple family (application)
US 0015956 W 20000609; CN 00809440 A 20000609; EP 00939756 A 20000609; JP 2001503214 A 20000609; KR 20017015922 A 20011210