EP 1192649 A1 20020403 - METHOD FOR PRODUCING SILICIDED POLYSILICON CONTACTS IN INTEGRATED SEMICONDUCTOR STRUCTURES
Title (en)
METHOD FOR PRODUCING SILICIDED POLYSILICON CONTACTS IN INTEGRATED SEMICONDUCTOR STRUCTURES
Title (de)
VERFAHREN ZUR HERSTELLUNG VON SILIZIERTEN POLYSILIZIUMKONTAKTEN IN INTEGRIERTEN HALBLEITERSTRUKTUREN
Title (fr)
PROCEDE DE REALISATION DE CONTACTS EN SILICIURE DE POLYSILICIUM DANS DES STRUCTURES EN SEMI-CONDUCTEUR INTEGREES
Publication
Application
Priority
- DE 0002098 W 20000628
- DE 19930420 A 19990701
Abstract (en)
[origin: WO0106554A1] The resistance of a polysilicon structure is often reduced by providing it with a silicide layer. However this presents a production problem in terms of only siliconizing certain polysilicon layers. Others, such as those that are to be used for resistors, are not siliconised. The invention therefore provides a simple method for the selective siliconization of polysilicon areas in integrated semiconductor structures.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/3205 (2006.01); H01L 21/331 (2006.01); H01L 21/768 (2006.01); H01L 21/822 (2006.01); H01L 21/8222 (2006.01); H01L 27/04 (2006.01); H01L 27/06 (2006.01); H01L 29/732 (2006.01)
CPC (source: EP KR US)
H01L 21/3205 (2013.01 - KR); H01L 21/32053 (2013.01 - EP US); H01L 21/76889 (2013.01 - EP US)
Citation (search report)
See references of WO 0106554A1
Citation (examination)
- US 5219768 A 19930615 - OKITA YOSHIHISA [JP]
- BOCK J ET AL: "0.5 /spl mu/m/60 GHz fmax implanted base Si bipolar technology", BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1998. PROCEEDINGS OF T HE 1998 MINNEAPOLIS, MN, USA 27-29 SEPT. 1998, PISCATAWAY, NJ, USA,IEEE, US, 27 September 1998 (1998-09-27), pages 160 - 163, XP010318211, ISBN: 978-0-7803-4497-6, DOI: DOI:10.1109/BIPOL.1998.741913
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
WO 0106554 A1 20010125; EP 1192649 A1 20020403; JP 2003519440 A 20030617; KR 100498855 B1 20050704; KR 20020021389 A 20020320; US 6642606 B1 20031104
DOCDB simple family (application)
DE 0002098 W 20000628; EP 00952877 A 20000628; JP 2001510910 A 20000628; KR 20017016788 A 20011228; US 3035802 A 20020326