EP 1193741 A3 20050112 - Semiconductor device having thin film transistor for supplying current to driven element

Title (en)

Semiconductor device having thin film transistor for supplying current to driven element

Title (de)

Halbleitervorrichtung mit einem Dünnschichttransistor zur Stromversorgung eines angetriebenen Elementes

Title (fr)

Dispositif semiconducteur ayant un transistor à couche mince pour l'alimentation en courant d'un élément asservi

Publication

EP 1193741 A3 20050112 (EN)

Application

EP 01308292 A 20010928

Priority

JP 2000299669 A 20000929
JP 2001279748 A 20010914

Abstract (en)

[origin: EP1193741A2] Thin film transistors TFT2a and TFT2b for driving elements are formed in parallel between a power source line (16) and an organic EL element (60), and active layers (12) of the transistors TFT2a and TFT2b are spaced apart in a scanning direction of a laser used for annealing for polycrystallization. As a result, the annealing conditions for the transistors TFT2a and TFT2b will not be exactly the same, thereby reducing the chance of a same problem being caused in both transistors TFT2a and TFT2b. When the laser scans in the column direction of the figure, one or more transistors TFT2 (TFT2a and TFT2b) are preferably arranged such that the channel length direction thereof coincides with the scanning direction.

IPC 1-7

H01L 21/268; H05B 33/00

IPC 8 full level

H05B 44/00 (2022.01); H01L 21/20 (2006.01); H01L 21/324 (2006.01); H01L 21/336 (2006.01); H01L 29/786 (2006.01); H01L 51/50 (2006.01)

CPC (source: EP KR US)

H01L 21/02488 (2013.01 - EP US); H01L 21/02532 (2013.01 - EP US); H01L 21/02587 (2013.01 - EP US); H01L 21/02678 (2013.01 - EP US); H01L 21/02686 (2013.01 - EP US); H01L 21/02691 (2013.01 - EP US); H01L 21/324 (2013.01 - KR)

Citation (search report)

[X] US 5981974 A 19991109 - MAKITA NAOKI [JP]
[X] WO 0002251 A1 20000113 - MATSUSHITA ELECTRIC IND CO LTD [JP], et al & US 6479837 B1 20021112 - OGAWA KAZUFUMI [JP], et al
[X] US 5943593 A 19990824 - NOGUCHI TAKASHI [JP], et al
[A] US 5942856 A 19990824 - KOYAMA JUN [JP]
[X] PATENT ABSTRACTS OF JAPAN vol. 1996, no. 12 26 December 1996 (1996-12-26)
[X] PATENT ABSTRACTS OF JAPAN vol. 2000, no. 11 3 January 2001 (2001-01-03) & US 6501448 B1 20021231 - KOMIYA NAOAKI [JP], et al
[A] PATENT ABSTRACTS OF JAPAN vol. 1999, no. 09 30 July 1999 (1999-07-30) & US 6451636 B1 20020917 - SEGAWA YASUO [JP], et al
[A] PATENT ABSTRACTS OF JAPAN vol. 2000, no. 11 3 January 2001 (2001-01-03) & US 6433486 B1 20020813 - YOKOYAMA RYOICHI [JP]

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

DOCDB simple family (publication)

EP 1193741 A2 20020403; EP 1193741 A3 20050112; CN 1223009 C 20051012; CN 1346153 A 20020424; JP 2002176063 A 20020621; JP 5030345 B2 20120919; KR 100539335 B1 20051228; KR 20020025809 A 20020404; TW 529108 B 20030421; US 2002070381 A1 20020613; US 2003001157 A1 20030102; US 6469318 B2 20021022; US 6548867 B2 20030415

DOCDB simple family (application)

EP 01308292 A 20010928; CN 01137968 A 20010929; JP 2001279748 A 20010914; KR 20010060481 A 20010928; TW 90124036 A 20010928; US 23397602 A 20020903; US 96601801 A 20010928