EP 1196947 A4 20030813 - SURFACE PLANARIZATION OF THIN SILICON FILMS DURING AND AFTER PROCESSING BY THE SEQUENTIAL LATERAL SOLIDIFICATION METHOD

Title (en)

SURFACE PLANARIZATION OF THIN SILICON FILMS DURING AND AFTER PROCESSING BY THE SEQUENTIAL LATERAL SOLIDIFICATION METHOD

Title (de)

OBERFLÄCHENPASSIVIERUNG VON DÜNNEN SILIZIUM-FILMEN WÄHREND UND NACH VERARBEITUNGSSCHRITTEN BEI DER SEQUENTIELLEN LATERALEN KRISTALLISATION

Title (fr)

PLANARISATION DE SURFACE DE MINCES COUCHES DE SILICIUM, PENDANT ET APRES TRAITEMENT AU MOYEN D'UN PROCEDE DE SOLIDIFICATION LATERALE SEQUENTIELLE

Publication

EP 1196947 A4 20030813 (EN)

Application

EP 00919501 A 20000321

Priority

US 0007479 W 20000321

Abstract (en)

[origin: WO0171791A1] Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser (110) for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator (120) for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer (144) for homoginizing modulated laser pulses in a predetermined plane, a sample stage (170) for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage (170) with respect to the laser pulses, and a computer (110) for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage (170) to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage (170) relative to the laser pulses.

IPC 1-7

H01L 21/31; H01L 21/00; H01L 21/26; H01L 21/38; H01L 21/20

IPC 8 full level

B23K 26/00 (2006.01); B23K 26/06 (2006.01); B23K 26/08 (2006.01); H01L 21/00 (2006.01); H01L 21/20 (2006.01); H01L 21/26 (2006.01); H01L 21/268 (2006.01); H01L 21/302 (2006.01); H01L 21/31 (2006.01); H01L 21/38 (2006.01)

CPC (source: EP KR US)

B23K 26/0622 (2015.10 - EP); B23K 26/066 (2015.10 - EP); B23K 26/0853 (2013.01 - EP); B23K 26/3576 (2018.07 - EP); H01L 21/02532 (2013.01 - EP KR US); H01L 21/02678 (2013.01 - EP KR); H01L 21/02686 (2013.01 - EP KR US); H01L 21/02691 (2013.01 - EP KR); H01L 21/268 (2013.01 - EP); H01L 21/302 (2013.01 - EP); H01L 21/3105 (2013.01 - KR); B23K 2101/40 (2018.07 - EP)

Citation (search report)

[X] US 4970546 A 19901113 - SUZUKI KAZUAKI [JP], et al
[E] WO 0118855 A1 20010315 - UNIV COLUMBIA [US]
[E] WO 0171786 A1 20010927 - UNIV COLUMBIA [US]
[Y] US 5496768 A 19960305 - KUDO TOSHIO [JP]
[Y] WO 0014784 A1 20000316 - KONINKL PHILIPS ELECTRONICS NV [NL]
[A] US 5893990 A 19990413 - TANAKA KOICHIRO [JP]
[A] US 5145808 A 19920908 - SAMESHIMA TOSHIYUKI [JP], et al
[X] EP 0655774 A2 19950531 - SONY CORP [JP]
[X] WO 9745827 A1 19971204 - UNIV COLUMBIA [US], et al
[X] EP 0681316 A2 19951108 - SONY CORP [JP]
[A] ISHIHARA R ET AL: "A NOVEL DOUBLE-PULSE EXCIMER-LASER CRYSTALLIZATION METHOD OF SILICON THIN-FILMS", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 34, no. 8A, August 1995 (1995-08-01), pages 3976 - 3981, XP000861506, ISSN: 0021-4922
[A] IM J S ET AL: "CONTROLLED SUPER-LATERAL GROWTH OF SI FILM FOR MICROSTRUCTURAL MANIPULATION AND OPTIMIZATION", PHYSICA STATUS SOLIDI (A). APPLIED RESEARCH, BERLIN, DE, vol. 166, 1998, pages 603 - 617, XP002935002, ISSN: 0031-8965
[A] PATENT ABSTRACTS OF JAPAN vol. 016, no. 204 (E - 1202) 15 May 1992 (1992-05-15)
See references of WO 0171791A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

WO 0171791 A1 20010927; AU 4018000 A 20011003; CA 2374498 A1 20010927; CN 1186802 C 20050126; CN 1363117 A 20020807; EP 1196947 A1 20020417; EP 1196947 A4 20030813; HK 1046469 A1 20030110; JP 2003528463 A 20030924; JP 4220156 B2 20090204; KR 100672909 B1 20070122; KR 20020002466 A 20020109; MX PA01011852 A 20020506; TW 499717 B 20020821

DOCDB simple family (application)

US 0007479 W 20000321; AU 4018000 A 20000321; CA 2374498 A 20000321; CN 00810687 A 20000321; EP 00919501 A 20000321; HK 02107913 A 20021031; JP 2001569872 A 20000321; KR 20017014881 A 20011121; MX PA01011852 A 20000321; TW 90122674 A 20010912