EP 1198840 A1 20020424 - METHOD FOR MAKING A DEVICE COMPRISING LAYERS OF PLANES OF QUANTUM DOTS
Title (en)
METHOD FOR MAKING A DEVICE COMPRISING LAYERS OF PLANES OF QUANTUM DOTS
Title (de)
HERSTELLUNGSVERFAHREN FÜR EIN BAUELEMENT BESTEHEND AUS EINEM STAPEL VON QUANTENPUNKT-SCHICHTEN
Title (fr)
PROCEDE DE REALISATION D'UN DISPOSITIF COMPRENANT UN EMPILEMENT DE PLANS DE BOITES QUANTIQUES
Publication
Application
Priority
- FR 0002000 W 20000711
- FR 9909646 A 19990726
Abstract (en)
[origin: FR2797093A1] The invention concerns a method for forming on a Ge or Si monocrystalline substrate successive Si/Ge, Si/SiGe or Si/SiGe/Ge layers for a Ge substrate and inversely for a Si substrate, and the electrochemical treatment of the stack of layers to make the layers porous and form therein residual crystallites. The invention is applicable to devices comprising layers of planes of quantum drops.
IPC 1-7
IPC 8 full level
H01L 21/306 (2006.01); H01L 29/15 (2006.01); H01L 33/34 (2010.01); H01L 29/12 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); B82Y 20/00 (2013.01 - EP US); H01L 21/30604 (2013.01 - EP US); H01L 29/151 (2013.01 - EP US); H01L 33/34 (2013.01 - EP US); H01L 29/127 (2013.01 - EP US); H01S 5/3227 (2013.01 - EP US); H01S 5/3412 (2013.01 - EP US)
Citation (search report)
See references of WO 0108225A1
Designated contracting state (EPC)
GB IT
DOCDB simple family (publication)
FR 2797093 A1 20010202; FR 2797093 B1 20011102; EP 1198840 A1 20020424; US 6690027 B1 20040210; WO 0108225 A1 20010201
DOCDB simple family (application)
FR 9909646 A 19990726; EP 00953226 A 20000711; FR 0002000 W 20000711; US 4871902 A 20020613