EP 1198841 A1 20020424 - ELECTRIC SEMICONDUCTOR ELEMENT WITH A CONTACT HOLE
Title (en)
ELECTRIC SEMICONDUCTOR ELEMENT WITH A CONTACT HOLE
Title (de)
ELEKTRISCHES HALBLEITERBAUELEMENT MIT EINEM KONTAKTLOCH
Title (fr)
COMPOSANT ELECTRIQUE A SEMICONDUCTEUR PRESENTANT UN TROU DE CONTACT
Publication
Application
Priority
- DE 0002113 W 20000703
- DE 19930797 A 19990703
Abstract (en)
[origin: DE19930797A1] An electric semiconductor element comprising a monocrystalline semiconductor substrate which is made, for example, out of silicon; an insulating layer (6) which is penetrated by a contact hole (30) on at least one point and arranged on the surface of the semiconductor substrate (1); in addition to a contact element which comes into contact with the semiconductor substrate (1) by means of the contact hole (30) and which is made of a material such as aluminium, whereby the semiconductor material of the substrate can be dissolved in an anisotropic process. The edges of the contact hole (30) are configured as diffusion-preventing structures.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 29/04 (2006.01)
CPC (source: EP US)
H01L 21/76816 (2013.01 - EP US); H01L 29/045 (2013.01 - EP US)
Citation (search report)
See references of WO 0103195A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
DE 19930797 A1 20010104; EP 1198841 A1 20020424; JP 2003504852 A 20030204; US 6787905 B1 20040907; WO 0103195 A1 20010111
DOCDB simple family (application)
DE 19930797 A 19990703; DE 0002113 W 20000703; EP 00958104 A 20000703; JP 2001508506 A 20000703; US 3061702 A 20020725