EP 1203409 A1 20020508 - ARRANGEMENT WITH P-DOPED AND N-DOPED SEMICONDUCTOR LAYERS AND METHOD FOR PRODUCING THE SAME
Title (en)
ARRANGEMENT WITH P-DOPED AND N-DOPED SEMICONDUCTOR LAYERS AND METHOD FOR PRODUCING THE SAME
Title (de)
ANORDNUNG MIT P-DOTIERTEN UND N-DOTIERTEN HALBLEITERSCHICHTEN SOWIE VERFAHREN ZU DEREN HERSTELLUNG
Title (fr)
DISPOSITIF A COUCHES SEMI-CONDUCTRICES DOPEES P ET DOPEES N ET SON PROCEDE DE FABRICATION
Publication
Application
Priority
- DE 0102309 W 20010622
- DE 10032543 A 20000705
Abstract (en)
[origin: WO0203473A1] The invention relates to an arrangement with P-doped semiconductor layers (12) and N-doped semiconductor layers (14, 10). Said arrangement has junctions between said P-doped semiconductor layers (12) and said N-doped semiconductor layers (14, 10), these junctions showing a Zener breakdown when a characteristic voltage for a junction is applied. A plurality of junctions are present between the P-doped semiconductor layers (12) and the N-doped semiconductor layers (14, 10) and the characteristic voltages enter additively into the breakdown voltage of the arrangement overall. The invention also relates to a method for producing an inventive arrangement.
IPC 1-7
IPC 8 full level
H01L 27/08 (2006.01); H01L 29/866 (2006.01)
CPC (source: EP US)
H01L 27/0814 (2013.01 - EP US); H01L 29/866 (2013.01 - EP US)
Citation (search report)
See references of WO 0203473A1
Designated contracting state (EPC)
DE ES FR GB IT
DOCDB simple family (publication)
WO 0203473 A1 20020110; AU 781754 B2 20050609; AU 7836601 A 20020114; DE 10032543 A1 20020117; EP 1203409 A1 20020508; JP 2004503092 A 20040129; TW 512538 B 20021201; US 2002179924 A1 20021205; US 7170104 B2 20070130
DOCDB simple family (application)
DE 0102309 W 20010622; AU 7836601 A 20010622; DE 10032543 A 20000705; EP 01956284 A 20010622; JP 2002507454 A 20010622; TW 90115911 A 20010629; US 7052102 A 20020708