EP 1206325 A4 20060802 - VAPOR PHASE CONNECTION TECHNIQUES
Title (en)
VAPOR PHASE CONNECTION TECHNIQUES
Title (de)
VERBINDUNGSTECHNIK IN DER GASPHASE
Title (fr)
TECHNIQUES DE CONNEXION EN PHASE VAPEUR
Publication
Application
Priority
- US 0022227 W 20000811
- US 14823399 P 19990811
Abstract (en)
[origin: WO0111662A2] Electrical connections are made between a pair of elements (32, 38) disposed on opposite side of a hole (28) extending through a dielectric layer (20) by evaporating a conductive material (40) such as a metal having high vapor pressure within the hole while maintaining the hole in a substantially sealed condition. The process may be performed simultaneously to form numerous connections within a microelectronic unit as, for example, within a multilayer circuit panel.
IPC 8 full level
B05D 5/12 (2006.01); H01L 21/48 (2006.01); H01L 21/60 (2006.01); H01L 21/768 (2006.01); H01L 23/12 (2006.01); H01L 25/065 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H05K 3/40 (2006.01); H05K 3/46 (2006.01)
CPC (source: EP KR)
H01L 21/486 (2013.01 - EP); H05K 3/40 (2013.01 - KR); H05K 3/4076 (2013.01 - EP); H01L 2924/0002 (2013.01 - EP); H05K 2203/083 (2013.01 - EP); H05K 2203/085 (2013.01 - EP); H05K 2203/1105 (2013.01 - EP)
Citation (search report)
- [A] US 5614114 A 19970325 - OWEN MARK D [US]
- [DA] US 3562009 A 19710209 - CRANSTON BENJAMIN HOWELL, et al
- [A] US 5031308 A 19910716 - YAMASHITA KAZUO [JP], et al
- [A] PATENT ABSTRACTS OF JAPAN vol. 1998, no. 05 30 April 1998 (1998-04-30)
- See references of WO 0111662A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0111662 A2 20010215; WO 0111662 A3 20010517; AU 6640000 A 20010305; EP 1206325 A2 20020522; EP 1206325 A4 20060802; JP 2003506891 A 20030218; KR 100764582 B1 20071009; KR 20020021405 A 20020320
DOCDB simple family (application)
US 0022227 W 20000811; AU 6640000 A 20000811; EP 00954052 A 20000811; JP 2001516225 A 20000811; KR 20027001781 A 20020208