EP 1208607 A1 20020529 - PASSIVATION OF GAN BASED FETS
Title (en)
PASSIVATION OF GAN BASED FETS
Title (de)
PASSIVIERUNG EINES GaN FETS
Title (fr)
PASSIVATION DE TRANSISTORS A EFFET DE CHAMP A BASE DE GAN
Publication
Application
Priority
- US 0020780 W 20000816
- US 14870299 P 19990816
Abstract (en)
[origin: WO0113436A1] Surface passivation of GaN based FETs, including undoped AlGaN/GaN HEMTs and MISFETs, and doped GaN MESFETs, reduces or eliminates the surface effects responsible for limiting both the RF current and breakdown voltages of the devices. Passivation is provided through deposition of a layer (32) made of a dielectric, such as silicon nitride, silicon dioxide or polyimide, on a barrier layer (16) between a source (24) and a drain (25) of the FET (10).
IPC 1-7
IPC 8 full level
H01L 21/285 (2006.01); H01L 21/335 (2006.01); H01L 21/338 (2006.01); H01L 23/522 (2006.01); H01L 29/778 (2006.01); H01L 29/812 (2006.01); H01L 29/20 (2006.01)
CPC (source: EP)
H01L 21/28587 (2013.01); H01L 23/5221 (2013.01); H01L 29/66462 (2013.01); H01L 29/66856 (2013.01); H01L 29/7782 (2013.01); H01L 29/812 (2013.01); H01L 29/2003 (2013.01); H01L 2924/0002 (2013.01)
Designated contracting state (EPC)
AT BE CH DE FR GB LI
DOCDB simple family (publication)
WO 0113436 A1 20010222; AU 6890900 A 20010313; EP 1208607 A1 20020529; EP 1208607 A4 20021023; TW 474024 B 20020121
DOCDB simple family (application)
US 0020780 W 20000816; AU 6890900 A 20000816; EP 00957262 A 20000816; TW 89115821 A 20000805