EP 1212795 A4 20060927 - SENSING DEVICES USING CHEMICALLY-GATED SINGLE ELECTRON TRANSISTORS
Title (en)
SENSING DEVICES USING CHEMICALLY-GATED SINGLE ELECTRON TRANSISTORS
Title (de)
SENSOR-ANORDNUNG MIT CHEMISCH GESTEUERTEM GATTER EINES EINELEKTRONTRANSISTORS
Title (fr)
DISPOSITIFS DE DETECTION UTILISANT DES TRANSISTORS A EFFET QUANTIQUE A DECLENCHEMENT CHIMIQUE
Publication
Application
Priority
- US 0022747 W 20000818
- US 37669599 A 19990818
Abstract (en)
[origin: WO0113432A1] A chemically-gated single-electron transistor (60) having a predetermined current-voltage characteristic and adapted for use as a chemical or biological sensor that is operable at room temperature. The single-electron transistor comprises a substrate (SuB) formed of a first insulating material, source (S) and drain (D) electrodes disposed on the substrate, and a metal nanoparticle (L) disposed between the source and drain electrodes that has a spatial dimension of a magnitude of approximately 12 nm or less. An analyte-specific binding agent is disposed on a surface of the nanoparticle. A binding event occurring between a target analyte and the binding agent causes a detectable change in the current-voltage characteristic.
IPC 8 full level
B82B 1/00 (2006.01); G01N 27/414 (2006.01); G01N 33/543 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01)
CPC (source: EP)
B82Y 10/00 (2013.01); B82Y 15/00 (2013.01); G01N 27/4145 (2013.01); G01N 27/4146 (2013.01); G01N 33/54373 (2013.01); G01N 33/5438 (2013.01); H01L 29/7613 (2013.01); H01L 2924/0002 (2013.01)
Citation (search report)
- No further relevant documents disclosed
- See references of WO 0113432A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0113432 A1 20010222; AU 7700600 A 20010313; EP 1212795 A1 20020612; EP 1212795 A4 20060927; JP 2003507889 A 20030225
DOCDB simple family (application)
US 0022747 W 20000818; AU 7700600 A 20000818; EP 00966700 A 20000818; JP 2001517431 A 20000818