EP 1213767 A2 20020612 - Nitride compound semiconductor element for FET, HEMT or HBT
Title (en)
Nitride compound semiconductor element for FET, HEMT or HBT
Title (de)
Halbleiteranordnung aus Nitridverbindung für FET, HEMT oder HBT
Title (fr)
Elément semi-conducteur en composé de nitrure pour FET, HEMT ou HBT
Publication
Application
Priority
- JP 2000373039 A 20001207
- JP 2001153693 A 20010523
- JP 2001267299 A 20010904
Abstract (en)
On a substrate is epitaxially grown an AIN film as an underlayer having a dislocation density of 10<11>/cm<2> or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of X-ray rocking curve at (002) reflection. Then, on the AlN film is epitaxially grown an n-GaN film as a conductive layer having a dislocation density of 10<10>/cm<2> or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of X-ray rocking curve at (002) reflection, to fabricate a semiconductor element. <IMAGE>
IPC 1-7
IPC 8 full level
C23C 16/34 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01); H01L 21/331 (2006.01); H01L 21/335 (2006.01); H01L 21/338 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/778 (2006.01); H01L 29/812 (2006.01)
CPC (source: EP US)
H01L 21/0237 (2013.01 - EP US); H01L 21/0242 (2013.01 - EP US); H01L 21/02458 (2013.01 - EP US); H01L 21/0254 (2013.01 - EP US); H01L 21/0262 (2013.01 - EP US); H01L 29/66318 (2013.01 - EP US); H01L 29/66462 (2013.01 - EP US); H01L 29/66856 (2013.01 - EP US); H01L 29/2003 (2013.01 - EP US)
Citation (applicant)
WO 9835388 A1 19980813 - NORTHROP GRUMMAN CORP [US]
Citation (examination)
EP 1211736 A2 20020605 - NGK INSULATORS LTD [JP]
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
EP 1213767 A2 20020612; EP 1213767 A3 20040414; JP 2003045899 A 20030214; JP 3836697 B2 20061025; US 2002113249 A1 20020822; US 2003151065 A1 20030814; US 2004079964 A1 20040429; US 6583468 B2 20030624; US 6707076 B2 20040316; US 6781164 B2 20040824
DOCDB simple family (application)
EP 01128995 A 20011206; JP 2001267299 A 20010904; US 37035003 A 20030218; US 69029003 A 20031021; US 709901 A 20011204