EP 1214735 A1 20020619 - METHOD OF PRODUCING RELAXED SILICON GERMANIUM LAYERS
Title (en)
METHOD OF PRODUCING RELAXED SILICON GERMANIUM LAYERS
Title (de)
METHODE ZUR HERSTELLUNG RELAXIERTER SILIZIUM-GERMANIUM-SCHICHTEN
Title (fr)
PROCEDE DE PRODUCTION DE COUCHES DE SILICIUM-GERMANIUM DECONTRACTEES
Publication
Application
Priority
- US 0040938 W 20000919
- US 15485199 P 19990920
Abstract (en)
[origin: WO0122482A1] A method for making a semiconductor material, and subsequent structure, including providing a monocrystalline silicon substrate; epitaxially growing, using a source gas of GexHyClz for the germanium component, on the silicon substrate at a temperature in excess of 850 DEG C a graded Si1-xGex layer with increasing germanium concentration at a gradient of less than 25 % Ge per micron to a final composition in the range of 0.1<=x<=1; and epitaxially growing a layer of semiconductor material on the graded layer.
IPC 1-7
IPC 8 full level
C30B 25/02 (2006.01); C30B 25/16 (2006.01); C30B 29/52 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01)
CPC (source: EP)
C30B 25/02 (2013.01); C30B 29/52 (2013.01); H01L 21/02381 (2013.01); H01L 21/0245 (2013.01); H01L 21/0251 (2013.01); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01)
Citation (search report)
See references of WO 0122482A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 0122482 A1 20010329; WO 0122482 A9 20020808; EP 1214735 A1 20020619; JP 2003517726 A 20030527
DOCDB simple family (application)
US 0040938 W 20000919; EP 00974128 A 20000919; JP 2001525758 A 20000919