EP 1218928 A1 20020703 - INTEGRATED CIRCUITS WITH BARRIER LAYERS AND METHODS OF FABRICATING SAME
Title (en)
INTEGRATED CIRCUITS WITH BARRIER LAYERS AND METHODS OF FABRICATING SAME
Title (de)
HALBLEITERANORDNUNGEN MIT BARRIERSCHICHTEN UND VERFAHREN ZUR HERSTELLUNG
Title (fr)
CIRCUITS INTEGRES A COUCHES BARRIERE ET LEURS PROCEDES DE FABRICATION
Publication
Application
Priority
- US 0024993 W 20000912
- US 40720999 A 19990928
Abstract (en)
[origin: WO0124237A1] A hydrogen diffusion barrier (132, 124, 332, 324, 432, 424, 532, 524, 720, 710, 750, 770, 912) in an integrated circuit (100, 200, 300, 400, 500, 700, 740, 900) is located to inhibit diffusion of hydrogen towards a dielectric thin film (128, 328, 428, 528, 711, 764, 908) of metal oxide material. The hydrogen diffusion barrier comprises at least one of the following oxides: tantalum pentoxide; tungsten oxide; aluminum oxide; titanium oxide. The dielectric thin film is ferroelectric or high-dielectric, nonferroelectric material. Preferably, the metal oxide comprises ferroelectric layered superlattice material. The hydrogen diffusion barrier layer may be a single continuous layer (132)completely overlying a common plate electrode and the dielectric thin film, but leaving other elements in the circuit exposed to hydrogen. The dielectric thin film may be displaced laterally from transistor elements so that certain portions of the circuit remain exposed to hydrogen. A metal oxide barrier layer (124, 324, 424, 524, 710) under the dielectric film prevents diffusion of elements in the dielectric layer to the integrated circuit substrate and also acts as a hydrogen diffusion barrier layer. The hydrogen diffusion barrier layers are formed by applying a metal organic precursor solution to a substrate (102, 104, 116, 124, 126, 128 and 130) and then heating it.
IPC 1-7
IPC 8 full level
H01L 21/8247 (2006.01); H01L 21/02 (2006.01); H01L 21/316 (2006.01); H01L 21/8246 (2006.01); H01L 27/105 (2006.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01)
CPC (source: EP KR)
H01L 21/31 (2013.01 - KR); H01L 28/55 (2013.01 - EP); H01L 28/60 (2013.01 - EP); H01L 28/75 (2013.01 - EP); H01L 29/516 (2013.01 - EP); H01L 21/28568 (2013.01 - EP); H01L 21/76895 (2013.01 - EP)
Citation (search report)
See references of WO 0124237A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0124237 A1 20010405; AU 7611800 A 20010430; EP 1218928 A1 20020703; JP 2003510839 A 20030318; KR 20020035620 A 20020511
DOCDB simple family (application)
US 0024993 W 20000912; AU 7611800 A 20000925; EP 00964977 A 20000912; JP 2001527330 A 20000912; KR 20027004045 A 20020328