Global Patent Index - EP 1222143 A1

EP 1222143 A1 20020717 - METHOD FOR PRODUCTION OF A SEMICONDUCTOR COMPONENT AND A SEMICONDUCTOR COMPONENT PRODUCED BY SAID METHOD

Title (en)

METHOD FOR PRODUCTION OF A SEMICONDUCTOR COMPONENT AND A SEMICONDUCTOR COMPONENT PRODUCED BY SAID METHOD

Title (de)

VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS SOWIE EIN NACH DEM VERFAHREN HERGESTELLTES HALBLEITERBAUELEMENT

Title (fr)

PROCEDE POUR PRODUIRE UN COMPOSANT A SEMICONDUCTEURS ET COMPOSANT A SEMICONDUCTEURS AINSI PRODUIT

Publication

EP 1222143 A1 20020717 (DE)

Application

EP 01940181 A 20010420

Priority

  • DE 0101516 W 20010420
  • DE 10032579 A 20000705

Abstract (en)

[origin: WO0202458A1] The invention relates to a method for the production of a semiconductor component (100; ; 2200), in particular, a multi-layered semiconductor component, preferably a micromechanical component, such as, in particular, a pressure sensor, comprising a semiconductor substrate (101), in particular, made from silicon and a semiconductor component produced by said method. The invention particularly relates to the reduction of the production costs of such a semiconductor component by developing the method such that, in a first step, a first porous layer (104; 1001; 1301) is formed in the semiconductor component and, in a second step, a cavity or a cavern (201; 1101; 1201; 1401; 2101; 2201) is formed under, or from, the first porous layer (104; 1001; 1301) in the semiconductor component. Said cavity or cavern can be provided with an external entry opening.

IPC 1-7

B81B 3/00; B81C 1/00; G01L 9/00; H01L 21/306

IPC 8 full level

B81B 3/00 (2006.01); B81C 1/00 (2006.01); G01L 9/00 (2006.01); H01L 21/306 (2006.01); H01L 29/84 (2006.01)

CPC (source: EP KR US)

B81C 1/00047 (2013.01 - EP KR US); B81C 1/00595 (2013.01 - EP KR US); G01L 9/0042 (2013.01 - EP KR US); G01L 9/0045 (2013.01 - EP KR US); H01L 21/3063 (2013.01 - EP KR US); B81B 2201/0264 (2013.01 - EP US); B81B 2203/0127 (2013.01 - EP US); B81B 2203/0315 (2013.01 - EP US); B81C 2201/0115 (2013.01 - EP US)

Citation (search report)

See references of WO 0202458A1

Designated contracting state (EPC)

DE ES FR GB IT SE

DOCDB simple family (publication)

WO 0202458 A1 20020110; DE 10032579 A1 20020124; DE 10032579 B4 20200702; EP 1222143 A1 20020717; EP 1810947 A2 20070725; EP 1810947 A3 20140402; EP 1810947 B1 20160622; JP 2004502555 A 20040129; JP 5100949 B2 20121219; KR 100859613 B1 20080923; KR 20020060170 A 20020716; US 2002170875 A1 20021121; US 2006014392 A1 20060119; US 2008286970 A1 20081120; US 7037438 B2 20060502; US 7479232 B2 20090120; US 8123963 B2 20120228; US RE44995 E 20140708

DOCDB simple family (application)

DE 0101516 W 20010420; DE 10032579 A 20000705; EP 01940181 A 20010420; EP 07107755 A 20010420; JP 2002507720 A 20010420; KR 20027002884 A 20020304; US 15224108 A 20080512; US 201313855925 A 20130403; US 22122805 A 20050906; US 7028602 A 20020708