EP 1224695 A2 20020724 - METHOD FOR THERMALLY TREATING SEMICONDUCTOR SUBSTRATES
Title (en)
METHOD FOR THERMALLY TREATING SEMICONDUCTOR SUBSTRATES
Title (de)
VERFAHREN ZUM THERMISCHEN BEHANDELN VON HALBLEITERSUBSTRATEN
Title (fr)
PROCEDE DE TRAITEMENT THERMIQUE DE SUBSTRATS EN SEMI-CONDUCTEUR
Publication
Application
Priority
- DE 19952015 A 19991028
- EP 0009534 W 20000929
Abstract (en)
[origin: DE19952015A1] The aim of the invention is to thermally treat objects, especially semiconductor substrates, in a complete and effective manner and in a reaction chamber. According to the inventive method, at least partial areas of the object are heated to at least three temperature peaks, whereby corresponding cooling phases in-between are provided.
IPC 1-7
IPC 8 full level
B01J 19/00 (2006.01); B01J 19/12 (2006.01); C30B 33/00 (2006.01); F27D 23/00 (2006.01); F27D 99/00 (2010.01); H01L 21/223 (2006.01); H01L 21/26 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); F27B 17/00 (2006.01); F27D 19/00 (2006.01)
CPC (source: EP KR US)
B01J 19/0013 (2013.01 - EP); B01J 19/12 (2013.01 - EP); B01J 19/123 (2013.01 - EP); C30B 33/00 (2013.01 - EP); F27D 99/0001 (2013.01 - EP); H01L 21/2233 (2013.01 - EP); H01L 21/324 (2013.01 - EP KR US); B01J 2219/00139 (2013.01 - EP); B01J 2219/0852 (2013.01 - EP); B01J 2219/0854 (2013.01 - EP); B01J 2219/0879 (2013.01 - EP); F27B 17/00 (2013.01 - EP); F27D 19/00 (2013.01 - EP)
Citation (search report)
See references of WO 0131698A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
DE 19952015 A1 20010517; EP 1224695 A2 20020724; JP 2003513446 A 20030408; KR 20020043257 A 20020608; TW 526562 B 20030401; WO 0131698 A2 20010503; WO 0131698 A3 20020228
DOCDB simple family (application)
DE 19952015 A 19991028; EP 0009534 W 20000929; EP 00979480 A 20000929; JP 2001534196 A 20000929; KR 20027005519 A 20020429; TW 89122079 A 20001020