Global Patent Index - EP 1224695 A2

EP 1224695 A2 20020724 - METHOD FOR THERMALLY TREATING SEMICONDUCTOR SUBSTRATES

Title (en)

METHOD FOR THERMALLY TREATING SEMICONDUCTOR SUBSTRATES

Title (de)

VERFAHREN ZUM THERMISCHEN BEHANDELN VON HALBLEITERSUBSTRATEN

Title (fr)

PROCEDE DE TRAITEMENT THERMIQUE DE SUBSTRATS EN SEMI-CONDUCTEUR

Publication

EP 1224695 A2 20020724 (DE)

Application

EP 00979480 A 20000929

Priority

  • DE 19952015 A 19991028
  • EP 0009534 W 20000929

Abstract (en)

[origin: DE19952015A1] The aim of the invention is to thermally treat objects, especially semiconductor substrates, in a complete and effective manner and in a reaction chamber. According to the inventive method, at least partial areas of the object are heated to at least three temperature peaks, whereby corresponding cooling phases in-between are provided.

IPC 1-7

H01L 21/324

IPC 8 full level

H01L 21/28 (2006.01); B01J 19/00 (2006.01); B01J 19/12 (2006.01); C30B 33/00 (2006.01); F27D 99/00 (2010.01); H01L 21/223 (2006.01); H01L 21/26 (2006.01); H01L 21/324 (2006.01); F27B 17/00 (2006.01); F27D 19/00 (2006.01)

CPC (source: EP US)

B01J 19/0013 (2013.01 - EP); B01J 19/12 (2013.01 - EP); B01J 19/123 (2013.01 - EP); C30B 33/00 (2013.01 - EP); F27D 99/0001 (2013.01 - EP); H01L 21/2233 (2013.01 - EP); H01L 21/324 (2013.01 - EP US); B01J 2219/00139 (2013.01 - EP); B01J 2219/0852 (2013.01 - EP); B01J 2219/0854 (2013.01 - EP); B01J 2219/0879 (2013.01 - EP); F27B 17/00 (2013.01 - EP); F27D 19/00 (2013.01 - EP)

Citation (search report)

See references of WO 0131698A3

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

DE 19952015 A1 20010517; EP 1224695 A2 20020724; JP 2003513446 A 20030408; KR 20020043257 A 20020608; TW 526562 B 20030401; WO 0131698 A2 20010503; WO 0131698 A3 20020228

DOCDB simple family (application)

DE 19952015 A 19991028; EP 0009534 W 20000929; EP 00979480 A 20000929; JP 2001534196 A 20000929; KR 20027005519 A 20020429; TW 89122079 A 20001020