EP 1226292 A1 20020731 - APPARATUS FOR GROWING EPITAXIAL LAYERS ON WAFERS
Title (en)
APPARATUS FOR GROWING EPITAXIAL LAYERS ON WAFERS
Title (de)
VORRICHTUNG ZUR HERSTELLUNG VON SCHICHTEN AUF SCHEIBEN
Title (fr)
APPAREIL PERMETTANT DE FAIRE CROITRE DES COUCHES EPITAXIALES SUR DES PLAQUETTES
Publication
Application
Priority
- US 0019879 W 20000724
- US 14567299 P 19990726
- US 61925400 A 20000719
Abstract (en)
[origin: WO0107691A1] An apparatus for growing epitaxial layers includes a spindle (142) having an opening (158) extending between upper and lower ends. A rotatable platform (134) is mounted to the upper end of the spindle, the platform including a top surface (136), a bottom surface (138) and a central opening (140) in substantial alignment with the spindle opening (158). The deposition chamber also includes a substantially porous wafer carrier (124) having wafer-receiving cavities (128) positioned over the top surface (136) of platform (134) and having a hollow space (130) in substantial alignment with central opening (140) of the platform (134). Spindle opening (158) is desirably connected to a vacuum pump so that the pressure level within hollow space (130) of the water carrier (124) is less than the pressure level within deposition chamber, thereby creating suction within the wafer-receiving cavities (128) for maintaining the wafers (122) in a substantially flat orientation.
IPC 1-7
IPC 8 full level
C23C 16/44 (2006.01); C23C 16/458 (2006.01); C30B 25/12 (2006.01); H01L 21/205 (2006.01); H01L 21/683 (2006.01)
CPC (source: EP KR)
C23C 16/4412 (2013.01 - EP KR); C23C 16/4584 (2013.01 - EP KR); C30B 25/12 (2013.01 - EP KR); H01L 21/6838 (2013.01 - EP KR)
Citation (search report)
See references of WO 0107691A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0107691 A1 20010201; AU 6491600 A 20010213; EP 1226292 A1 20020731; JP 2004513857 A 20040513; KR 100565138 B1 20060330; KR 20020019574 A 20020312
DOCDB simple family (application)
US 0019879 W 20000724; AU 6491600 A 20000724; EP 00952166 A 20000724; JP 2001512955 A 20000724; KR 20027001052 A 20020125