EP 1227172 A3 20021127 - Method of reducing plasma charge damage for plasma processes
Title (en)
Method of reducing plasma charge damage for plasma processes
Title (de)
Verfahren zur Reduzierung von plasmaverusachten Schäden in Plasmaprozessen
Title (fr)
Méthode de réduction de dégats induits par un plasma pendant des processus de plasma
Publication
Application
Priority
US 77120301 A 20010126
Abstract (en)
[origin: EP1227172A2] A method is provided for depositing a thin film on a substrate (612) in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center (616) of the substrate more rapidly than at an edge of the substrate. <IMAGE>
IPC 1-7
IPC 8 full level
C23C 16/52 (2006.01); C23C 16/455 (2006.01); H01L 21/205 (2006.01); H01L 21/302 (2006.01); H01L 21/31 (2006.01)
CPC (source: EP KR US)
C23C 16/455 (2013.01 - EP US); C23C 16/45559 (2013.01 - KR); C23C 16/505 (2013.01 - KR); H01J 37/3244 (2013.01 - EP KR US)
Citation (search report)
- [X] US 5451435 A 19950919 - YU CHEN-HUA D [US]
- [XY] WO 0103159 A1 20010111 - LAM RES CORP [US], et al
- [Y] WO 9957747 A1 19991111 - APPLIED MATERIALS INC [US]
- [A] US 5522934 A 19960604 - SUZUKI AKIRA [JP], et al
- [E] US 2001031321 A1 20011018 - ISHIKAWA SHIGEO [JP]
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
EP 1227172 A2 20020731; EP 1227172 A3 20021127; JP 2002334871 A 20021122; JP 5004396 B2 20120822; KR 100870853 B1 20081127; KR 20020063140 A 20020801; TW 575893 B 20040211; US 2003024901 A1 20030206; US 2004048492 A1 20040311; US 6660662 B2 20031209; US 7036453 B2 20060502
DOCDB simple family (application)
EP 01124618 A 20011015; JP 2002019054 A 20020128; KR 20020004603 A 20020126; TW 90125614 A 20011016; US 65835003 A 20030908; US 77120301 A 20010126