EP 1234330 A2 20020828 - METHOD RELATING TO ANODIC BONDING
Title (en)
METHOD RELATING TO ANODIC BONDING
Title (de)
METHODE FÜR ANODISCHES BONDEN
Title (fr)
PROCEDE CONCERNANT LES LIAISONS ANODIQUES
Publication
Application
Priority
- SE 0002012 W 20001017
- SE 9903798 A 19991019
- US 16041199 P 19991019
Abstract (en)
[origin: WO0129890A2] The present invention relates to a method of bonding a first member (110, 210, 130, 230, 410, 430, 510, 530, 610) to a second silicon member (120, 220, 420a, 420b, 600) through anodic bonding. The method comprises the steps of selectively depositing on said first member bondable sections (170a, 170b, 270, 470a, 470b, 470c, 570, 620) before bringing said first and second members together for anodic bonding.
IPC 1-7
IPC 8 full level
H01L 23/12 (2006.01); H01L 21/58 (2006.01); H01L 23/02 (2006.01); H01L 23/06 (2006.01); H01L 23/14 (2006.01)
CPC (source: EP)
H01L 24/26 (2013.01); H01L 24/83 (2013.01); H01L 2224/8319 (2013.01); H01L 2224/8385 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01011 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01058 (2013.01); H01L 2924/014 (2013.01); H01L 2924/07802 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/19043 (2013.01)
Citation (search report)
See references of WO 0129890A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 0129890 A2 20010426; WO 0129890 A3 20010907; AU 1183101 A 20010430; EP 1234330 A2 20020828; JP 2003512723 A 20030402
DOCDB simple family (application)
SE 0002012 W 20001017; AU 1183101 A 20001017; EP 00973305 A 20001017; JP 2001531139 A 20001017