Global Patent Index - EP 1234356 B1

EP 1234356 B1 20070124 - ACTIVE ELECTRONIC SCAN MICROWAVE REFLECTOR

Title (en)

ACTIVE ELECTRONIC SCAN MICROWAVE REFLECTOR

Title (de)

AKTIVER HF REFLEKTOR UNTER VERWENDUNG VON ELEKTRONISCHER STRAHLSCHWENKUNG

Title (fr)

REFLECTEUR HYPERFREQUENCE ACTIF A BALAYAGE ELECTRONIQUE

Publication

EP 1234356 B1 20070124 (FR)

Application

EP 00988873 A 20001124

Priority

  • FR 0003286 W 20001124
  • FR 9914933 A 19991126

Abstract (en)

[origin: WO0139325A1] The invention concerns an active electronic scan microwave reflector, capable of being illuminated by a microwave source to form an antenna. The inventive reflector comprises a set of elementary cells arranged side by side on a surface, each cell comprising a phase-shifting microwave circuit and a conductor plane arranged substantially parallel to the microwave circuit, the phase-shifting circuit comprising at least two half-phase-shifters (50). One half-phase-shifter comprises at least a dielectric support, at least two electrically conductive wires (42) substantially parallel to the given direction Oy, arranged on the support and bearing at least each a two-state semiconductor element (D1, D2), each wire being connected to conductors (43, 44, 45) controlling the semiconductor elements, said conductors being substantially normal to the wires, and two conductor zones (48) arranged towards the periphery of the cell, substantially parallel to the control conductors. The control conductors are at least three in number in each half-phase-shifter and are electrically insulated from one half-phase-shifter to the next to control the state of all the semiconductor elements independently from one another. The geometrical and electrical characteristics of the half-phase-shifters are such that to each of the states of the semiconductor elements corresponds a given phase-shifting value (d phi 1, , d phi 8) of the electromagnetic wave which is reflected by the cell. The reflector further comprises an electronic circuit (38) controlling the state of the semiconductor elements.

IPC 8 full level

H01Q 3/46 (2006.01)

CPC (source: EP US)

H01Q 3/46 (2013.01 - EP US)

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

DOCDB simple family (publication)

WO 0139325 A1 20010531; AT E352883 T1 20070215; AU 2522501 A 20010604; DE 60033173 D1 20070315; DE 60033173 T2 20071108; EP 1234356 A1 20020828; EP 1234356 B1 20070124; FR 2801729 A1 20010601; FR 2801729 B1 20070209; JP 2004508738 A 20040318; US 6670928 B1 20031230

DOCDB simple family (application)

FR 0003286 W 20001124; AT 00988873 T 20001124; AU 2522501 A 20001124; DE 60033173 T 20001124; EP 00988873 A 20001124; FR 9914933 A 19991126; JP 2001540887 A 20001124; US 13027602 A 20020528