EP 1235317 A2 20020828 - Semiconductor laser having light feedback function
Title (en)
Semiconductor laser having light feedback function
Title (de)
Halbleiterlaser mit optischer Rückkopplung
Title (fr)
Laser semi-conducteur à retour optique
Publication
Application
Priority
- JP 2001029682 A 20010206
- JP 2001168644 A 20010604
Abstract (en)
A semiconductor laser module is provided for emitting pumping laser light which excels in temporal stability. The semiconductor laser module comprises a semiconductor laser device which has a layered structure formed on a GaAs substrate, wherein the layered structure has an active layer in a quantum well structure, formed of semiconductor materials including Ga and As, and a member having a light feedback function. The two components are optically coupled. A well layer in the active layer of the semiconductor laser device is a thick layer having a thickness of 10 nm or more. The active layer is doped with Si, and an n-type cladding layer underlying the active layer is also doped with Si. <IMAGE>
IPC 1-7
IPC 8 full level
H01S 5/14 (2006.01); H01S 5/125 (2006.01); H01S 5/30 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01)
CPC (source: EP US)
B82Y 20/00 (2013.01 - EP US); H01S 5/146 (2013.01 - EP US); H01S 5/305 (2013.01 - EP US); H01S 5/34 (2013.01 - EP US); H01S 5/3403 (2013.01 - EP US); H01S 5/3407 (2013.01 - EP US); H01S 5/343 (2013.01 - EP US)
Designated contracting state (EPC)
FR GB
DOCDB simple family (publication)
EP 1235317 A2 20020828; EP 1235317 A3 20050119; EP 1235317 B1 20070411; CA 2370588 A1 20020806; CA 2370588 C 20091124; CN 1220312 C 20050921; CN 1379516 A 20021113; US 2004196884 A1 20041007; US 6912237 B2 20050628
DOCDB simple family (application)
EP 02001984 A 20020204; CA 2370588 A 20020205; CN 02105624 A 20020205; US 6239702 A 20020131