EP 1238414 A1 20020911 - METHOD FOR THE EPITAXY OF (INDIUM, ALUMINUM, GALLIUM) NITRIDE ON FOREIGN SUBSTRATES
Title (en)
METHOD FOR THE EPITAXY OF (INDIUM, ALUMINUM, GALLIUM) NITRIDE ON FOREIGN SUBSTRATES
Title (de)
VERFAHREN ZUR EPITAXIE VON (INDIUM, ALUMINIUM, GALLIUM)-NITRID AUF FREMDSUBSTRATEN
Title (fr)
PROCEDE D'EPITAXIE DE NITRURE (D'INDIUM, D'ALUMINIUM, DE GALLIUM) SUR DES SUBSTRATS ETRANGERS
Publication
Application
Priority
- DE 10041285 A 20000822
- EP 0109713 W 20010822
Abstract (en)
[origin: DE10041285A1] The invention relates to a method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates. The aim of the invention involves the search for a mask-free process, which still permits the advantages offered by a reduction in dislocation effected by lateral overgrowth. To this end, the invention provides that recesses (7) are provided on the surface of substrates (1), whereby the walls (4) of the recesses (7) are made in such a manner that the growth fronts of the (In, Al, Ga)N layers (3) are separated from one another on the bottoms of the recesses (7) and on the elevations (6) located therebetween.
IPC 1-7
IPC 8 full level
C30B 23/02 (2006.01); C30B 25/02 (2006.01); C30B 25/18 (2006.01); H01L 21/20 (2006.01); H01L 21/203 (2006.01); H01L 21/205 (2006.01)
CPC (source: EP US)
C30B 23/02 (2013.01 - EP US); C30B 25/02 (2013.01 - EP US); C30B 25/18 (2013.01 - EP US); C30B 29/403 (2013.01 - EP US); H01L 21/0237 (2013.01 - EP US); H01L 21/02381 (2013.01 - EP US); H01L 21/0243 (2013.01 - EP US); H01L 21/02433 (2013.01 - EP US); H01L 21/0254 (2013.01 - EP US); H01L 21/02639 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
DE 10041285 A1 20020307; AU 1815802 A 20020326; EP 1238414 A1 20020911; JP 2004509462 A 20040325; US 2003111008 A1 20030619; WO 0223603 A1 20020321
DOCDB simple family (application)
DE 10041285 A 20000822; AU 1815802 A 20010822; EP 0109713 W 20010822; EP 01984676 A 20010822; JP 2002527555 A 20010822; US 11127502 A 20020809