Global Patent Index - EP 1238414 A1

EP 1238414 A1 2002-09-11 - METHOD FOR THE EPITAXY OF (INDIUM, ALUMINUM, GALLIUM) NITRIDE ON FOREIGN SUBSTRATES

Title (en)

METHOD FOR THE EPITAXY OF (INDIUM, ALUMINUM, GALLIUM) NITRIDE ON FOREIGN SUBSTRATES

Title (de)

VERFAHREN ZUR EPITAXIE VON (INDIUM, ALUMINIUM, GALLIUM)-NITRID AUF FREMDSUBSTRATEN

Title (fr)

PROCEDE D'EPITAXIE DE NITRURE (D'INDIUM, D'ALUMINIUM, DE GALLIUM) SUR DES SUBSTRATS ETRANGERS

Publication

EP 1238414 A1 (DE)

Application

EP 01984676 A

Priority

  • DE 10041285 A
  • EP 0109713 W

Abstract (en)

[origin: DE10041285A1] The invention relates to a method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates. The aim of the invention involves the search for a mask-free process, which still permits the advantages offered by a reduction in dislocation effected by lateral overgrowth. To this end, the invention provides that recesses (7) are provided on the surface of substrates (1), whereby the walls (4) of the recesses (7) are made in such a manner that the growth fronts of the (In, Al, Ga)N layers (3) are separated from one another on the bottoms of the recesses (7) and on the elevations (6) located therebetween.

IPC 1-7 (main, further and additional classification)

H01L 21/20; H01L 21/203; H01L 21/205

IPC 8 full level (invention and additional information)

C30B 23/02 (2006.01); C30B 25/02 (2006.01); C30B 25/18 (2006.01); H01L 21/20 (2006.01); H01L 21/203 (2006.01); H01L 21/205 (2006.01)

CPC (invention and additional information)

C30B 23/02 (2013.01); C30B 25/02 (2013.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); H01L 21/0237 (2013.01); H01L 21/02381 (2013.01); H01L 21/0243 (2013.01); H01L 21/02433 (2013.01); H01L 21/0254 (2013.01); H01L 21/02639 (2013.01)

Citation (search report)

See references of WO 0223603A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

EPO simple patent family

DE 10041285 A1 20020307; AU 1815802 A 20020326; EP 1238414 A1 20020911; JP 2004509462 A 20040325; US 2003111008 A1 20030619; WO 0223603 A1 20020321

INPADOC legal status


2006-08-23 [18D] APPLICATION DEEMED TO BE WITHDRAWN

- Effective date: 20060303

2003-07-02 [RIN1] INVENTOR CHANGED BEFORE GRANT

- Inventor name: STRITTMATTER, ANDRE

2003-07-02 [RIN1] INVENTOR CHANGED BEFORE GRANT

- Inventor name: KROST, ALOIS

2003-07-02 [RIN1] INVENTOR CHANGED BEFORE GRANT

- Inventor name: BIMBERG, DIETER

2002-09-11 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20020412

2002-09-11 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

2002-09-11 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO:

- Free text: AL;LT;LV;MK;RO;SI